浏览历史
名称 厂商 描述
1MBH25D-120
Fuji Electric Corp. of America
38 A, 1200 V, N沟道 IGBT
38 A, 1200 V, N-CHANNEL IGBT
1MBH50D-060S
Fuji Electric Corp. of America
75 A, 600 V, N沟道 IGBT
75 A, 600 V, N-CHANNEL IGBT
1MBH75D-060S
Fuji Electric Corp. of America
83A, 600V, N-CHANNEL IGBT
1MBI1600U4C-120
Fuji Electric Corp. of America
1600A, 1200V, N-CHANNEL IGBT
1MBI1600U4C-120
Fuji Electric Corp. of America
1600 A, 1200 V, N沟道 IGBT
1600 A, 1200 V, N-CHANNEL IGBT
1MBI3600U4D-120
Fuji Electric Corp. of America
3600 A, 1200 V, N沟道 IGBT
3600 A, 1200 V, N-CHANNEL IGBT
1MBI3600U4D-120
Fuji Electric Corp. of America
3600 A, 1200 V, N-CHANNEL IGBT
1MBI400V-120-50
Fuji Electric Corp. of America
Insulated Gate Bipolar Transistor, 480A I(C), 1200V V(BR)CES
1MBK50D-060S
Fuji Electric Corp. of America
65 A, 600 V, N沟道 IGBT, TO-247
65 A, 600 V, N-CHANNEL IGBT, TO-247
1N4001GP
Fuji Electric Corp. of America
Rectifier Diode, 1 Element, 1A, 50V V(RRM)
2KBP06
Fuji Electric Corp. of America
Bridge Rectifier Diode, 1 Phase, 2A, 600V V(RRM), Silicon
2MBI100L-060
Fuji Electric Corp. of America
100A, 600V, N-CHANNEL IGBT
2MBI100N-060
Fuji Electric Corp. of America
100 A, 600 V, N沟道 IGBT
100 A, 600 V, N-CHANNEL IGBT
2MBI100N-060
Fuji Electric Corp. of America
100A, 600V, N-CHANNEL IGBT
2MBI1200U4G-170
Fuji Electric Corp. of America
1600 A, 1700 V, N沟道 IGBT
1600 A, 1700 V, N-CHANNEL IGBT
2MBI150-060
Fuji Electric Corp. of America
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,150A I(C)
2MBI150J-060
Fuji Electric Corp. of America
TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,150A I(C)
2MBI150U2A-060
Fuji Electric Corp. of America
150 A, 600 V, N-CHANNEL IGBT
2MBI150U2A-060
Fuji Electric Corp. of America
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel
2MBI200L-060
Fuji Electric Corp. of America
200 A, 600 V, N沟道 IGBT
200 A, 600 V, N-CHANNEL IGBT
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