| EM638165TS-7G最大时钟频率 |
143 MHz
|
| EM638165TS-7G端子数量 |
54
|
| EM638165TS-7G最小工作温度 |
0.0 Cel
|
| EM638165TS-7G最大工作温度 |
70 Cel
|
| EM638165TS-7G额定供电电压 |
3.3 V
|
| EM638165TS-7G欧盟RoHS规范 |
Yes
|
| EM638165TS-7G状态 |
Active-Unconfirmed
|
| EM638165TS-7Gsub_category |
DRAMs
|
| EM638165TS-7Gaccess_time_max |
5.4 ns
|
| EM638165TS-7Ginterleaved_burst_length |
1,2,4,8
|
| EM638165TS-7Gi_o_type |
COMMON
|
| EM638165TS-7Gjesd_30_code |
R-PDSO-G54
|
| EM638165TS-7G存储密度 |
6.71E7 bit
|
| EM638165TS-7G内存IC类型 |
SYNCHRONOUS DRAM
|
| EM638165TS-7G内存宽度 |
16
|
| EM638165TS-7G位数 |
4.19E6 words
|
| EM638165TS-7G位数 |
4M
|
| EM638165TS-7G组织 |
4MX16
|
| EM638165TS-7G输出特性 |
3-STATE
|
| EM638165TS-7G包装材料 |
PLASTIC/EPOXY
|
| EM638165TS-7Gpackage_code |
TSOP
|
| EM638165TS-7Gpackage_equivalence_code |
TSOP54,.46,32
|
| EM638165TS-7G包装形状 |
RECTANGULAR
|
| EM638165TS-7G包装尺寸 |
SMALL OUTLINE, THIN PROFILE
|
| EM638165TS-7Gpower_supplies__v_ |
3.3
|
| EM638165TS-7Gqualification_status |
COMMERCIAL
|
| EM638165TS-7Grefresh_cycles |
4096
|
| EM638165TS-7Gsequential_burst_length |
1,2,4,8,FP
|
| EM638165TS-7Gstandby_current_max |
0.0020 Amp
|
| EM638165TS-7G最大供电电压 |
0.1200 Amp
|
| EM638165TS-7G表面贴装 |
YES
|
| EM638165TS-7G工艺 |
CMOS
|
| EM638165TS-7G温度等级 |
COMMERCIAL
|
| EM638165TS-7G端子形式 |
GULL WING
|
| EM638165TS-7G端子间距 |
0.8000 mm
|
| EM638165TS-7G端子位置 |
DUAL
|
