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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1A3 | Daco Semiconductor Co Ltd | Rectifier Diode | - | |||||
| 1A3 | Bytesonic Corporation | Rectifier Diode, 1 Element, 1A, 200V V(RRM) | - | |||||
| AD | BAP70-04W,115 | NXP Semiconductor | 标准二极管,Pin Diode, 50V | |||||
| 1A3 | Hitano Enterprise Corp | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, R-1, 2 PIN | - | |||||
| 1A3 | Cheng-Yi Electronic Co Ltd | Rectifier Diode | - | |||||
| 1A3 | Micro Commercial Components | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, MINIATURE, PLASTIC, R-1, 2 PIN | - | |||||
| 1A3 | Promax-Johnton Electronic Corporation | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, PLASTIC, R-1, 2 PIN | - | |||||
| 1A3 | Taitron Components Inc | Rectifier Diode, | - | |||||
| 1A3 | HY Electronic Corp | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon | - | |||||
| 1A3 | LRC Leshan Radio Co Ltd | Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, | - | |||||
| 1A3 | Jinan Jingheng Electronics Co Ltd | Rectifier Diode | - | |||||
| 1A3 | Galaxy Microelectronics | 1.0A,200V Standard Recovery Rectifiers, Diodes, Single, 200V, 1A, 1.1V, 1A, 30A | - | |||||
| π121A30 | 荣湃(2PaiSemi) | NB SOIC-8, 2, 1, 600Mbps, Logic Low, AC3000Vrms Surge5000V | - | |||||
| π131A31 | 荣湃(2PaiSemi) | NB SOIC-16, 3, 1, 600Mbps, Logic High, AC3000Vrms Surge5000V | - | |||||
| π161A31 | 荣湃(2PaiSemi) | NB SOIC-16, 6, 1, 600Mbps, Logic High, AC3000Vrms Surge5000V | - | |||||
| 1A3G | Galaxy Microelectronics | 1A,200V Standard Recovery Rectifiers, Diodes, Single, 200V, 1A, 1.1V, 1A, 30A | - | |||||
| 1A3(G) | Luguang Electronic Technology | 普通整流二极管, 1.0A, 200V, 30A, 1.0V, 1.0A, 5.0μA, /nS | - | |||||
| ME6211A33M3G-N | MICRONE 微盟 | 线性稳压器/LDO SOT23-3 Vo=3.3V Io=500mA, SMT, 62dB, 6V, SOT23-3, 固定, -40℃~+125℃, 500mA, 3.3V, 3.3V, 1.45mm, Active, 3000pcs, MICRONE, 3.10 x 1.80mm, -40℃~+150℃, China, Consumer, RoHS, 4.35V | - | |||||
| CL9901A30S3M | CHIPLINK 芯联半导体 | SOT-23 | - | |||||
| PZS51A3V9CS | PanJit Semiconductor | Product Status:Active, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):3.9, VZ @ IZT Min.(V):3.82, VZ @ IZT Max.(Ω):3.98, IZT(Ω):0.05, IR @ VR Max.(V):5, IR @ VR Max.:2 | - | |||||
| PZS51A39CS | PanJit Semiconductor | Product Status:Active, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):39, VZ @ IZT Min.(V):38.22, VZ @ IZT Max.(Ω):39.78, IZT(Ω):0.05, IR @ VR Max.(V):0.01, IR @ VR Max.:29.6 | - | |||||
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