对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
1N4150 | Hitano Enterprise Corp | Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-35, DO-35, 2 PIN | - | |||||
1N4150 | Iskra Semic Capacitors Industry | Rectifier Diode, 1 Element, 0.2A, 50V V(RRM) | - | |||||
AD | D5V0L1B2S9-7 | Arrow | ESD Suppressor Diode TVS Bi-Dir 5V 14Vc 2-Pin SOD-923 T/R | |||||
1N4150 | Kuwait Semiconductor Co Ltd | Rectifier Diode, 1 Element, 0.2A, 50V V(RRM) | - | |||||
1N4150 | SY Sinyork Co Ltd | Rectifier Diode, 1 Element, 0.15A, 50V V(RRM) | - | |||||
1N4150 | Semitronics Corp | Rectifier Diode, 1 Element, 0.001A, 50V V(RRM), Silicon, DO-35, DO-35, 2 PIN | - | |||||
1N4150 | Rectron Semiconductor | Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, | - | |||||
1N4150 | Invensys Sensor Systems | Rectifier Diode, 1 Element, 0.2A, 50V V(RRM), | - | |||||
1N4150 | Vishay Intertechnologies | Rectifier Diode, 1 Phase, 1 Element, 0.2A, 50V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN | - | |||||
1N4150 | Microsemi FPGA & SoC | Rectifier Diode, 1 Phase, 1 Element, 0.3A, 50V V(RRM), Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 | - | |||||
1N4150 | Surge Components Inc | Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, | - | |||||
1N4150 | Rochester Electronics LLC | 0.2A, 50V, SILICON, SIGNAL DIODE, DO-35, DO-35, 2 PIN | - | |||||
1N4150 | National Semiconductor Corporation | Rectifier Diode, 1 Phase, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35 | - | |||||
1N4150 | Transys Electronics Limited | Rectifier Diode | - | |||||
1N4150 | HY Electronic Corp | Rectifier Diode, 1 Element, 0.053A, 100V V(RRM), Silicon, DO-35, DO-35, 2 PIN | - | |||||
1N4150 | General Diode Corp | Rectifier Diode, 1 Element, 0.2A, 50V V(RRM) | - | |||||
1N4150 | Sangdest Microelectronics (Nanjing) Co Ltd | Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 | - | |||||
1N4150 | Luguang Electronic Technology | 小信号开关二极管, 200mA, 50V, 1V, 0.2uA, 0.1uA | - | |||||
1N4150 | PanJit Semiconductor | Product Status:Active, VRRM Max.(mW):50, PTO(ns):500, trr Max.(A):4, IFSM(ms):0.5, @tp(V):1000, VF Max.(mA):1, @IF(µA):200, IR Max.(V):0.1 | - | |||||
1N4150 | Galaxy Microelectronics | 0.3A,50V,Small Signal Switching Diode, Diodes, Single, 50V, 0.3A, 0.74V, 0.01A, 4A | - | |||||
1N4150W | Galaxy Microelectronics | 0.2A,50V,Surface Mount Small Signal Switching Diodes, Single, 50V, 0.2A, 1V, 0.2A, 0.5A, 0.1uA | - |