2SC3357

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

Power Bipolar Transistor,

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3

120V,0.1A,General Purpose NPN Bipolar Transistor, Diodes, NPN, 12V, 0.1A, 50, 300, 10V

Bipolar Transistors;NPN;0.1A;12V;SOT-89

Ic:100mA, Vceo:12V, Pcm:1200mW

SOT-89, YFW佑风微, 晶体管, 晶体管

Transistor

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, MINIMOLD PACKAGE-3

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, POWER, PLASTIC, SC-62, 3 PIN

Device Marking:RF, IC (mA):210, VCEO (V):15, hFE Min / Max:70/170, hFE IC/VCE (mA)/(Volts):20/10

三极管(BJT), 12V, 100mA, 1200mW, 12V, 6.5GHz, SOT-89

三极管(BJT), 12V, 100mA, 1.2W, 12V, 6.5GHz, SOT-89