对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BSS138W | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 0.21A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN | - | |||||
BSS138W | Diodes Incorporated | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
AD | BUV21G | Onsemi | 双极晶体管,Switchmode NPN Silicon Power Transistor | |||||
BSS138W | onsemi | N-Channel Logic Level Enhancement Mode Field Effect Transistor 50 , 210mA, 3.5Ω, 3000-REEL | ¥2.3844 | |||||
BSS138W | Micro Commercial Components | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, | - | |||||
BSS138W | WEITRON INTERNATIONAL CO., LTD. | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-70, 3 PIN | - | |||||
BSS138W | Rectron Semiconductor | Small Signal Field-Effect Transistor, | - | |||||
BSS138W | PanJit Semiconductor | Small Signal Field-Effect Transistor, 0.3A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | - | |||||
BSS138W | Suzhou Good-Ark Electronics Co Ltd | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN | - | |||||
BSS138W | Infineon Technologies AG | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | - | |||||
BSS138W | Galaxy Microelectronics | Small Signal Field-Effect Transistor, | - | |||||
BSS138W | Galaxy Microelectronics | , Diodes, Single, N, N, 0.2W, 50W, ±20V | - | |||||
BSS138W | YFW佑风微 | SOT-323, YFW佑风微, 晶体管, 场效应管 | - | |||||
BSS138W | SHIKUES 時科 | Id:0.27A, Vds:50V, Vgs:±20V | - | |||||
BSS138W-E6433 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
BSS138WE6327XT | Infineon Technologies AG | BSS138WE6327XT | - | |||||
BSS138W-H6433 | Infineon Technologies AG | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
BSS138WE6433XT | Infineon Technologies AG | BSS138WE6433XT | - | |||||
BSS138W-H6327 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | - | |||||
LBSS138WT1G | LRC Leshan Radio Co Ltd | VDSS (V):50, VGS(V):20, ID (A):0.2, VGSth Min (V):0.5, VGSth Max (V):1.5 | - | |||||
BSS138W-7-F | MULTICOMP PRO | 场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3; | - |