对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
EZ141 | New Japan Radio Co Ltd | Zener Diode, 14V V(Z), 2%, 0.4W, | - | |||||
EZ141 | Sakata USA Corp | Zener Diode, 14V V(Z), 2%, 0.4W | - | |||||
AD | ESD5481MUT5G | OnSemi | ESD/TVS/Surge/OVP,Trans Voltage Suppressor Diode, 5V, Bidirectional | |||||
EZ_141_M17 | HUBER+SUHNER | Wire And Cable, | - | |||||
EZ_141_CU_TP | HUBER+SUHNER | Wire And Cable, | - | |||||
NEZ1414-2E | California Eastern Laboratories (CEL) | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, X17, 2 PIN | - | |||||
NEZ1414-8E | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-61, 2 PIN | - | |||||
NEZ1414-5E | California Eastern Laboratories (CEL) | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, X17, 2 PIN | - | |||||
NEZ1414-2E | Renesas Electronics Corporation | KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET | - | |||||
EZ_141_CT | HUBER+SUHNER | Wire And Cable, | - | |||||
EZ_141_TP_M17 | HUBER+SUHNER | Wire And Cable | - | |||||
NEZ1414-8E | Renesas Electronics Corporation | KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET | - | |||||
NEZ1414-3E | California Eastern Laboratories (CEL) | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, X17, 2 PIN | - | |||||
NEZ1414-3E | NEC Electronics America Inc | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | - | |||||
NEZ1414-5E | Renesas Electronics Corporation | KU BAND, GaAs, N-CHANNEL, RF POWER, MESFET | - | |||||
NEZ1414-4E | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-78, 2 PIN | - | |||||
NEZ1414-2E | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-78, 2 PIN | - | |||||
NEZ1414-8E | California Eastern Laboratories (CEL) | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-61, 2 PIN | - | |||||
NEZ1414-2E | NEC Electronics America Inc | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | - | |||||
NEZ1414-5H | NEC Electronics America Inc | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, X-17, 2 PIN | - | |||||
NEZ1414-5E | NEC Electronics Group | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, T-78, 2 PIN | - |