对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FQA47P06SMD2 | TT Electronics Power and Hybrid / Semelab Limited | 55A, 60V, 0.026ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AC, HERMETIC SEALED, CEREMIC, SMD2, 3 PIN | - | |||||
FQA47P06SMD2 | TT Electronics Resistors | Power Field-Effect Transistor, 55A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AC, HERMETIC SEALED, CEREMIC, SMD2, 3 PIN | - | |||||
AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM | |||||
FQA34N25 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 34A I(D), 250V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA47P06SMD | TT Electronics Power and Hybrid / Semelab Limited | 55A, 60V, 0.026ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | - | |||||
FQA90N15 | Fairchild Semiconductor Corporation | N-Channel QFET® MOSFET 150V, 90A, 18mΩ, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL | - | |||||
FQA30N40 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA17N40 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | - | |||||
FQAG-FREQ2-BBE00010 | Fox Electronics | Series - Fundamental Quartz Crystal, 10MHz Min, 15.999MHz Max, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
FQAF40N25 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 24A I(D), 250V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQAFREQ1AAD10010 | Fox Electronics | Parallel - Fundamental Quartz Crystal, 11.0592MHz Min, 12MHz Max, ULTRA MINIATURE, CERAMIC, SMD, 2 PIN | - | |||||
FQA19N20C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 21.8A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | - | |||||
FQAFREQ3AAD10010 | Fox Electronics | Parallel - Fundamental Quartz Crystal, 16MHz Min, 40MHz Max, ULTRA MINIATURE, CERAMIC, SMD, 2 PIN | - | |||||
FQAF16N25C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11.4A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQA7N65C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA140N10 | Inchange Semiconductor Company Ltd | MOSFETs;140A;100V;TO-3P | - | |||||
FQA40N25 | Inchange Semiconductor Company Ltd | MOSFETs;40A;250V;TO-3P | - | |||||
FQA8N100C | Inchange Semiconductor Company Ltd | MOSFETs;8A;1000V;TO-3P | - | |||||
FQA28N50F | Inchange Semiconductor Company Ltd | MOSFETs;28.4A;500V;TO-3P | - | |||||
FQA70N15 | Inchange Semiconductor Company Ltd | MOSFETs;70A;150V;TO-3P | - | |||||
FQA24N50F | Inchange Semiconductor Company Ltd | MOSFETs;24A;500V;TO-3P | - |