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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| ILD1011M15 | Integra Technologies Inc | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
| ILD1011M150 | Integra Technologies Inc | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
| AD | CLF1G0035-100 | Ampleon | 射频/微波组件,CLF1G0035-100 - 100W Broadband RF power GaN HEMT | |||||
| ILD1011M15HV | Integra Technologies Inc | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
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