对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
PZT2907 | Siemens | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | - | |||||
PZTM1101/T3 | NXP Semiconductors | TRANSISTOR 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | - | |||||
AD | IPW50R140CPFKSA1 | Infineon Technologies | MOSFET/FET,IPW50R140 - 500V CoolMOS N-Channel Power MOSFET | |||||
PZT3906 | Secos Corporation | Transistor | - | |||||
PZTA14TRL | NXP Semiconductors | TRANSISTOR 0.3 A, 30 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | - | |||||
PZTA42 | North American Philips Discrete Products Div | Transistor, | - | |||||
PZTA14TRL | YAGEO Corporation | Power Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin | - | |||||
PZTA92 | Unisonic Technologies Co Ltd | Transistor | - | |||||
PZTA42 | Philips Semiconductors | Transistor | - | |||||
PZT772E | WEITRON INTERNATIONAL CO., LTD. | Transistor | - | |||||
PZT2222AG-AA3-R | Unisonic Technologies Co Ltd | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE PACKAGE-4 | - | |||||
PZTA42G-AA3-R | Unisonic Technologies Co Ltd | Transistor | - | |||||
PZTA14 | Luguang Electronic Technology | 达林顿晶体管, 2W, 30V, 0.5A, 125MHZ | - | |||||
PZT3906 | SHIKUES 時科 | Ic:200mA, Vceo:-40V, Pcm:1000mW | - | |||||
PZT5551 | SHIKUES 時科 | Ic:600mA, Vceo:160V, Pcm:1500mW | - | |||||
PZT560 | SHIKUES 時科 | Ic:500mA, Vceo:-600V, Pcm:2000mW | - | |||||
PZT2222A | SHIKUES 時科 | Ic:600mA, Vceo:40V, Pcm:1000mW | - | |||||
PZT2907A | SHIKUES 時科 | Ic:600mA, Vceo:-60V, Pcm:1500mW | - | |||||
PZT3904 | SHIKUES 時科 | Ic:200mA, Vceo:40V, Pcm:625mW | - | |||||
PZTA42 | SHIKUES 時科 | Ic:500mA, Vceo:300V, Pcm:2000mW | - | |||||
PZTA92 | SHIKUES 時科 | Ic:500mA, Vceo:-300V, Pcm:2000mW | - |