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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1MBH05D-120 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-3PL, 3 PIN | - | |||||
| 1MBH05D-120-S06TT | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor, | - | |||||
| AD | F3L200R07PE4BOSA1 | Infineon Technologies | IGBT模块,F3L200R07 - IGBT Module | |||||
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