对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IGN1030M800 | Integra Technologies Inc | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET, | - | |||||
AD | BLA1011-200 | Ampleon | 射频/微波组件,BLA1011-200 - 200W LDMOS Avionics Power Transistor |