对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
AD | FSV8100V | Arrow | Diode Schottky 100V 8A 3-Pin(2+Tab) TO-277 T/R | |||||
1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - |