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XC6216
Description: 28V Low Power Consumption 150mA Voltage Regulators中文描述: 28V输入电压，低消耗电流，150mA电压调整器
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PBSS4350X T/R
Description: 50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V -
PBSS4350X,115
Category: 小信号晶体管Description: 50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd中文描述：3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AAPackage: PLASTIC, SC-62, 3 PIN -
PBSS4350X,135
Category: 小信号晶体管Description: 50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd中文描述：3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AAPackage: PLASTIC, SC-62, 3 PIN -
PBSS4350X,146
Description: 50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) -
PBSS4350X,147
Description: 50 V, 3 A NPN low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: NPN ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 170 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 290 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <90 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) -
PBSS5350X T/R
Description: 50 V, 3 A PNP low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: PNP ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 180 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 300 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <100 mV; VCEO max: 50 V -
PBSS5350X,115
Category: 小信号晶体管Description: 50 V, 3 A PNP low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: PNP ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 180 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 300 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <100 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd中文描述：3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243AAPackage: PLASTIC, SC-62, TO-243, 3 PIN -
PBSS5350X,135
Category: 小信号晶体管Description: 50 V, 3 A PNP low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: PNP ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 180 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 300 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <100 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd中文描述：3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243AAPackage: PLASTIC, SC-62, TO-243, 3 PIN -
PBSS5350X,146
Description: 50 V, 3 A PNP low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: PNP ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 180 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 300 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <100 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) -
PBSS5350X,147
Description: 50 V, 3 A PNP low VCEsat (BISS) transistor - fT min: 100 MHz; hFE min: 200 ; I<sub>C</sub> max: 3000 mA; Polarity: PNP ; V<sub>CEsat</sub> at I<sub>c</sub>=1 A, I<sub>b</sub>=50 mA: 180 mV; V<sub>CEsat</sub> at I<sub>c</sub>=2 A, I<sub>b</sub>=200 mA: 300 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: <100 mV; VCEO max: 50 V; Package: SOT89 (MPT3; UPAK) -
BUK474-200A
Category: JFETsDescription: PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)中文描述：5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220Package: PLASTIC, FULL PACK-3 -
BUK474-200B
Category: JFETsDescription: PowerMOS transistor Isolated version of BUK454-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)中文描述：4.7 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220Package: PLASTIC, FULL PACK-3 -
BUK475-100A
Category: JFETsDescription: PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)中文描述：14 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFETPackage: PLASTIC, FULL PACK-3 -
BUK475-100B
Category: JFETsDescription: PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)中文描述：12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFETPackage: PLASTIC, FULL PACK-3 -
P89V52X2FBD
Category: 微控制器/微处理器Description: 8-bit 80C51 low power 8 kB flash microcontroller with 256 B RAM, 192 B data EEPROM中文描述：8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP44Package: 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT389-1, LQFP-44 -
P89V52X2FBD,157
Category: 微控制器/微处理器Description: 8-bit 80C51 low power 8 kB flash microcontroller with 256 B RAM, 192 B data EEPROM; Package: SOT389-1 (LQFP44); Container: Tray Pack, Bakeable, Multiple中文描述：8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP44Package: 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, SOT389-1, LQFP-44 -
PBSS2515VPN T/R
Description: 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V -
PBSS2515VPN,115
Category: 小信号晶体管Description: 15 V low VCEsat NPN/PNP transistor - I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd中文描述：500 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTORPackage: 1.60 X 1.20 MM, PLASTIC PACKAGE-6 -
PBSS2515VS T/R
Description: 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V -
PBSS2515VS,115
Category: 小信号晶体管Description: 15 V low VCEsat NPN double transistor - Complement: PBSS3515VS ; I<sub>C</sub> max: 1000 mA; IC (AV): 500 mA; Polarity: 2 x NPN ; Ptot max: 300 mW; V<sub>CEsat</sub> at I<sub>c</sub>=200 mA, I<sub>b</sub>=10 mA: 150 mV; V<sub>CEsat</sub> at I<sub>c</sub>=500 mA, I<sub>b</sub>=50 mA: 250 mV; VCEO max: 15 V; Package: SOT666 (SS-Mini); Container: Tape reel smd中文描述：500 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTORPackage: PLASTIC PACKAGE-6
