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Manufacturer(1): 全部 STMicroelectronics N.V.(12929)
Category(4): 全部 FLASH(895) EEPROM(80) SRAM(30) TVS-瞬态抑制二极管(1)
  • M39208

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNA1T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNA5T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNA6T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNB1T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNB5T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-10WNB6T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-15WNB1T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208-15WNB6T

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208NA

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39208NB

    Description: Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory
    中文描述:单芯片2 Mbit闪存和64千位并行EEPROM存储器
  • M39432-10VNC6T

    Description: Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
    中文描述:单芯片4 Mbit闪存和EEPROM的256千位并行
  • M39432-10WNC6T

    Description: Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
    中文描述:单芯片4 Mbit闪存和EEPROM的256千位并行
  • M39432-12VNC6T

    Description: Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
    中文描述:单芯片4 Mbit闪存和EEPROM的256千位并行
  • M39432NC

    Description: Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
    中文描述:单芯片4 Mbit闪存和EEPROM的256千位并行
  • NAND01G-A

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述:128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的页面,1.8V/3V,NAND闪存芯片
  • NAND01GR3A

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述:128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的页面,1.8V/3V,NAND闪存芯片
  • NAND01GR3A0AN1

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述:128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的页面,1.8V/3V,NAND闪存芯片
  • NAND01GR3A0AN1E

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述:128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的页面,1.8V/3V,NAND闪存芯片
  • NAND01GR3A0AN1F

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述:128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的页面,1.8V/3V,NAND闪存芯片
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