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Search NAND about 1000 results, following1-20 items. (0.081seconds)
Manufacturer(99+): 全部 Numonyx Asia Pacific Pte, Ltd.(8524) ST Microelectronics(8416) Chipcon(4495) STMicroelectronics N.V.(4216) Texas Instruments, Inc.(2535) NXP Semiconductors N.V.(1703) National Semiconductor, Corp.(1665) Fairchild Semiconductor, Corp.(1371) Intersil, Corp.(1199)
Category(58): 全部 门电路(18885) PROM(16123) 存储器(604) 存储器模块(449) 外设及接口(212) MOSFETs(165) TVS二极管 - 瞬态电压抑制(88) 稳压器(55) SRAM(54) Gate(54)

  • NAND01G-A

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01G-A

    STMicroelectronics N.V.

  • NAND01G-B

    Description: 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
    中文描述：2112 Byte/1056字的页面，1.8V/3V，NAND闪存

    NAND01G-B

    Electronic Theatre Controls, Inc.

  • NAND01G-B2B

    Description: 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
    中文描述：1千兆，2千兆位，2112 Byte/1056字的页面，1.8V/3V，NAND闪存

    NAND01G-B2B

    STMicroelectronics N.V.

  • NAND01G-M

    Category: 存储器模块
    Description: 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
    中文描述：同一封装内整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字节页）NAND闪存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP

    NAND01G-M

    STMicroelectronics N.V.

  • NAND01G-N

    Description: 1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
    中文描述：1千兆位（x8/x16）2112字节页NAND闪存和512兆位（x16）的同一封装内整合，1.8，多芯片封装

    NAND01G-N

    Electronic Theatre Controls, Inc.

  • NAND01GR3A

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A

    STMicroelectronics N.V.

  • NAND01GR3A0AN1

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN1

    STMicroelectronics N.V.

  • NAND01GR3A0AN1E

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN1E

    STMicroelectronics N.V.

  • NAND01GR3A0AN1F

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN1F

    STMicroelectronics N.V.

  • NAND01GR3A0AN1T

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN1T

    STMicroelectronics N.V.

  • NAND01GR3A0AN6

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN6

    STMicroelectronics N.V.

  • NAND01GR3A0AN6E

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN6E

    STMicroelectronics N.V.

  • NAND01GR3A0AN6F

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN6F

    STMicroelectronics N.V.

  • NAND01GR3A0AN6T

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AN6T

    STMicroelectronics N.V.

  • NAND01GR3A0AV1

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV1

    STMicroelectronics N.V.

  • NAND01GR3A0AV1E

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV1E

    STMicroelectronics N.V.

  • NAND01GR3A0AV1F

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV1F

    STMicroelectronics N.V.

  • NAND01GR3A0AV1T

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV1T

    STMicroelectronics N.V.

  • NAND01GR3A0AV6

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV6

    STMicroelectronics N.V.

  • NAND01GR3A0AV6E

    Description: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    中文描述：128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的页面，1.8V/3V，NAND闪存芯片

    NAND01GR3A0AV6E

    STMicroelectronics N.V.

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