Description: Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:850V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; Voltage Rating:450V
Description: Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation:5W; C-E Breakdown Voltage:320V; DC Current Gain Min (hfe):15; Collector Current:10A
Description: Darlington Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):100; Collector Current:20A; Package/Case:TO-3; DC Current Gain Max (hfe):18000; Mounting Type:Through Hole
Description: Darlington Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:1.2W; C-E Breakdown Voltage:25V; DC Current Gain Min (hfe):800; Collector Current:2A; DC Current Gain Max (hfe):3200; Power (Ptot):1.2W
Description: Bipolar Transistor; Transistor Polarity:Dual P Channel; C-E Breakdown Voltage:300V; DC Current Gain Min (hfe):40; Collector Current:0.1A; Package/Case:TO-92; DC Current Gain Max (hfe):320
Description: Darlington Bipolar Transistor; Transistor Polarity:N Channel; C-E Breakdown Voltage:120V; DC Current Gain Min (hfe):100; Collector Current:12A; DC Current Gain Max (hfe):1000
Description: Darlington Bipolar Transistor; Transistor Polarity:Dual P Channel; Power Dissipation:1W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):120; Collector Current:2A; DC Current Gain Max (hfe):270; Power (Ptot):1W
Description: Bipolar Transistor; Transistor Polarity:Dual P Channel; C-E Breakdown Voltage:60V; DC Current Gain Min (hfe):5; Collector Current:15A; Package/Case:TO-3; DC Current Gain Max (hfe):70
Description: RF Bipolar Transistor; Collector Emitter Voltage, Vceo:1V; Transistor Polarity:N Channel; Power Dissipation:5W; DC Current Gain Min (hfe):25; Collector Current:400mA; DC Current Gain Max (hfe):200; Power (Ptot):5W
Description: Darlington Bipolar Transistor; Power Dissipation, Pd:150W; DC Current Gain Min (hfe):1000; Collector Current:10A; Power (Ptot):150W; Transistor Polarity:N Channel RoHS Compliant: Yes
Description: Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:NPN; Power Dissipation:800mW; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):1000; Collector Current:1A; Package/Case:3-TO-92
Description: Bipolar Transistor; Collector Emitter Voltage, Vceo:800V; Transistor Polarity:NPN; Power Dissipation:70W; C-E Breakdown Voltage:1500V; DC Current Gain Min (hfe):5; Collector Current:8A; Package/Case:3-TO-3PML
Description: Bipolar Transistor; Collector Emitter Voltage, Vceo:450V; Transistor Polarity:NPN; Power Dissipation:150W; DC Current Gain Min (hfe):10; Collector Current:15A; Package/Case:3-TO-218; Terminal Type:3; Current Rating:15A
Description: Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:80V; Transistor Polarity:N Channel; Power Dissipation:0.8W; C-E Breakdown Voltage:80V; DC Current Gain Min (hfe):15; Collector Current:1A; Package/Case:TO-39
Description: Bipolar Transistor; Collector Emitter Voltage, Vceo:24V; Transistor Polarity:PNP; C-E Breakdown Voltage:12V; DC Current Gain Min (hfe):110; Collector Current:100mA; Package/Case:TO-5; Current Rating:0.1A; Voltage Rating:24V