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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 包装说明 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | YTEOL | HTS代码 | Date Of Intro | 零件包装代码 | 针数 | |
对比 | 2N7002 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002 | 2260 | 2024-09-14 00:18:20 | SOT-23, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.5 | ||||||||||
对比 | BSS138 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 220 mA | 6 Ω | LOGIC LEVEL COMPATIBLE | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS138 | 2260 | 2024-09-14 00:18:20 | SOT-23, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.5 | ||||||||||
对比 | BSS84 | onsemi | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 10 Ω | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS84 | 2260 | 2024-09-14 00:18:07 | 318-08 | compliant | Philippines | EAR99 | [object Object] | 6.5 | |||||||||||
对比 | BSS123 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 10 Ω | 3.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS123 | 2260 | 2024-09-13 23:18:09 | SOT-23, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.5 | 8541.21.00.95 | 1996-09-01 | ||||||||
对比 | 2N7002ET1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 260 mA | 2.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002ET1G | 2260 | 2024-09-13 23:18:44 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.5 | SOT-23 (TO-236) 3 LEAD | 3 | |||||||||
对比 | BSS138LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS138LT1G | 2260 | 2024-09-13 23:52:50 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | 6.5 | SOT-23 (TO-236) 3 LEAD | 3 | |||||||||
对比 | BSS123LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 6 Ω | 4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS123LT1G | 2260 | 2024-09-13 23:58:06 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 318-08 | compliant | Mainland China | EAR99 | 6.5 | 8541.29.00.95 | SOT-23 (TO-236) 3 LEAD | 3 | |||||||||
对比 | 2N7002BK,215 | Nexperia | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 350 mA | 1.6 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 2N7002BK,215 | 229119436 | 2024-09-06 20:23:47 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | SOT23 | compliant | Mainland China | EAR99 | 6.5 | TO-236 | 3 | ||||||||||
对比 | FDV303N | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 25 V | 1 | 680 mA | 450 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FDV303N | 2260 | 2024-09-14 00:18:07 | 318-08 | compliant | Mainland China | EAR99 | [object Object] | 6.9 | |||||||||||||
对比 | NDS331N | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 1.3 A | 160 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | NDS331N | 2260 | 2024-09-13 23:19:48 | SUPERSOT-3 | 527AG | compliant | Philippines | EAR99 | [object Object] | 6.9 | |||||||||||||
对比 | 2N7002,215 | Nexperia | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | IEC-60134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 2N7002,215 | 229119436 | 2024-09-06 20:22:19 | SOT23 | compliant | Mainland China | EAR99 | 6.5 | 1995-04-01 | TO-236 | 3 | ||||||||||
对比 | BSH205G2R | Nexperia | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 2 A | 170 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BSH205G2R | 229119436 | 2024-09-14 00:07:54 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | SOT23 | compliant | EAR99 | [object Object] | 6.9 | TO-236 | 3 | |||||||||||||
对比 | BS170FTA | Diodes Incorporated | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 60 V | 1 | 150 mA | 5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 330 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 2024-09-13 23:07:44 | compliant | EAR99 | [object Object] | 6.5 | |||||||||||||||||
对比 | DMG3414U-7 | Diodes Incorporated | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 4.2 A | 25 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 780 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 2024-09-13 23:03:30 | compliant | EAR99 | [object Object] | 7.07 | 3 | ||||||||||||||
对比 | BSS84AK,215 | Nexperia | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 180 mA | 8.5 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | AEC-Q101; IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BSS84AK,215 | 229119436 | 2024-07-10 21:07:32 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 6.5 | 2017-02-01 | TO-236 | 3 | ||||||||||||
对比 | PMN48XP,115 | Nexperia | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 20 V | 1 | 4.1 A | 55 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G6 | e3 | IEC-60134 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | PMN48XP,115 | 229119436 | 2024-05-01 17:05:23 | SC-74, TSOP-6 | SOT457 | compliant | Mainland China, Malaysia | EAR99 | 6.95 | TSOP | 6 | ||||||||||||||
对比 | FDN338P | onsemi | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 1.6 A | 115 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | FDN338P | 2260 | 2024-09-14 00:18:15 | SUPERSOT-3 | 527AG | compliant | Philippines | EAR99 | [object Object] | 6.9 | ||||||||||||
对比 | DMG1013UW-7 | Diodes Incorporated | 查询价格 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 20 V | 1 | 820 mA | 750 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 2024-09-13 23:06:11 | GREEN, PLASTIC PACKAGE-3 | compliant | Mainland China | EAR99 | 6.8 | 3 | |||||||||||||
对比 | NDS355AN | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 1.7 A | 85 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | NDS355AN | 2260 | 2024-09-13 23:10:30 | SUPERSOT-3 | 527AG | compliant | Philippines | EAR99 | [object Object] | 6.95 | ||||||||||||
对比 | IRFL014NTRPBF | Infineon Technologies AG | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 1.9 A | 160 mΩ | AVALANCHE RATED, HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.1 W | SWITCHING | SILICON | TO-261AA | R-PSSO-G3 | Not Qualified | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | IRFL014NTRPBF | 2065 | 2024-09-13 23:59:10 | SOT-223, 3 PIN | compliant | EAR99 | [object Object] | 6.9 |