FDC602P
晶体管 > 小信号场效应晶体管

FDC602P

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
市场均价:
¥2.5694
市场总库存:
644777
生命周期状态:
Active
风险等级:
0.58
设计
产品
长期
参数规格
数据手册
FDC602P
ON Semiconductor
参考设计(6)
Dual Buck (1.8V @ 1.5A) - PMP4848.3 - TI Tool Folder
PMP4848: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
Dual Buck (6V @ 2.1A)
PMP4848.2: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
Dual buck (3.3V @ 1.1A)
PMP4848.1: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
Dual Buck (1.8V @ 1.5A)
PMP4848.3: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
Dual Buck (1V @ 4A) - PMP4848.4 - TI Tool Folder
PMP4848: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
Dual Buck (1V @ 4A)
PMP4848.4: This design implements three buck and one sync buck converters with an overall system efficiency of 87%. Possible applications include set-top boxes, telecom and automotive.
1 - 5 / 6个参考设计
详细参数
参数名称 参数值
Brand Name ON Semiconductor
是否无铅 不含铅 不含铅
生命周期 Active
IHS 制造商 ON SEMICONDUCTOR
包装说明 SMALL OUTLINE, R-PDSO-G6
制造商包装代码 419BL
Reach Compliance Code compliant
ECCN代码 EAR99
HTS代码 8541.29.00.95
Factory Lead Time [object Object]
风险等级 0.58
Samacsys Confidence 3
Samacsys Status Released
2D Presentation https://componentsearchengine.com/2D/0T/166981.1.1.png
Schematic Symbol https://componentsearchengine.com/symbol.php?partID=166981
PCB Footprint https://componentsearchengine.com/footprint.php?partID=166981
3D View https://componentsearchengine.com/viewer/3D.php?partID=166981
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 20 V
最大漏极电流 (Abs) (ID) 5.5 A
最大漏极电流 (ID) 5.5 A
最大漏源导通电阻 0.033 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G6
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 6
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
最低工作温度 -55 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 P-CHANNEL
最大功率耗散 (Abs) 1.6 W
认证状态 Not Qualified
子类别 Other Transistors
表面贴装 YES
端子面层 Tin (Sn)
端子形式 GULL WING
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
展开剩余 32 条 折叠部分参数
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替代料
FFF 形态、装配、功能兼容替代料(16) FE 功能等同替代料(38)
对比 型号 描述 厂商 生命周期 风险等级
对比 FDC602P
小信号场效应晶体管
当前料
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC604P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC602P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
ON Semiconductor Active
对比 SI3445DV
小信号场效应晶体管
5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Rochester Electronics LLC Active
对比 STT5PF20V
小信号场效应晶体管
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6
STMicroelectronics Obsolete
对比 SI3469DV-T1-E3
小信号场效应晶体管
Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R
Vishay Intertechnologies Not Recommended
对比 SI3495DV-T1-E3
小信号场效应晶体管
Trans MOSFET P-CH 20V 5.3A 6-Pin TSOP T/R
Vishay Intertechnologies Obsolete
对比 FDC602P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC604P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3469DV-T1-GE3
小信号场效应晶体管
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
Vishay Intertechnologies Not Recommended
对比 SI3445DV_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC602PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVS62Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVL99Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVD84Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC604PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
1 - 5 / 16个替代料
对比 型号 描述 厂商 生命周期 风险等级
对比 FDC602P
小信号场效应晶体管
当前料
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC604P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC638P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC640P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC602P
小信号场效应晶体管
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
ON Semiconductor Active
对比 SI3445DV
小信号场效应晶体管
5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Rochester Electronics LLC Active
对比 UPA1913TE-A
小信号场效应晶体管
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN
Renesas Electronics Corporation Active
对比 STT5PF20V
小信号场效应晶体管
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6
STMicroelectronics Obsolete
对比 SI3493BDV-T1-GE3
小信号场效应晶体管
TRANSISTOR 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Vishay Intertechnologies Not Recommended
对比 SI3469DV-T1-E3
小信号场效应晶体管
Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R
Vishay Intertechnologies Not Recommended
对比 SI3879DV-T1-GE3
功率场效应晶体管
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Vishay Intertechnologies Obsolete
对比 SI3493DV-T1-E3
小信号场效应晶体管
TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal
Vishay Intertechnologies Obsolete
对比 SI3495DV-T1-E3
小信号场效应晶体管
Trans MOSFET P-CH 20V 5.3A 6-Pin TSOP T/R
Vishay Intertechnologies Obsolete
对比 FDC638P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC640P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC602P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC604P_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3469DV-T1-GE3
小信号场效应晶体管
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
Vishay Intertechnologies Not Recommended
对比 FDC640P_NF073
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DV_NL
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC638P_NF073
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 UPA1915TE-A
小信号场效应晶体管
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
Renesas Electronics Corporation Not Recommended
对比 SI3493DV-E3
小信号场效应晶体管
TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
Vishay Intertechnologies Obsolete
对比 SI3403DV-T1-GE3
小信号场效应晶体管
TRANSISTOR 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Vishay Intertechnologies Obsolete
对比 SI3983DV-T1-GE3
小信号场效应晶体管
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Vishay Intertechnologies Obsolete
对比 SI3493DV
其他晶体管
Transistor
Vishay Intertechnologies Transferred
对比 UPA1915TE
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-95, 6 PIN
NEC Electronics Group Obsolete
对比 UPA1913TE
小信号场效应晶体管
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN
Renesas Electronics Corporation Not Recommended
对比 SI3493DV-T1-GE3
小信号场效应晶体管
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
Vishay Intertechnologies Obsolete
对比 FDC638PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC638PL99Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3493DV-T1
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Vishay Intertechnologies Obsolete
对比 FDC602PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVS62Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC640PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVL99Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 SI3445DVD84Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
对比 FDC604PD87Z
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Fairchild Semiconductor Corporation Obsolete
1 - 5 / 38个替代料
价格 & 库存
市场价格分析
当前暂无数据分析
  • 1. Newark ¥0.9598
  • 2. Newark ¥3.5487
  • 3. element14 ¥3.6047
  • 4. Future Electronics ¥3.7051
价格走势
当前暂无数据分析
库存走势
当前暂无数据分析
分销商库存
市场总库存
644,777
  • 1. Future Electronics 491,965
  • 2. RS Components 41,660
  • 3. Farnell 37,779
  • 4. Newark 37,679
  • 5. element14 35,694
同型号不同厂商
同型号不同厂商的对比(1)
对比 型号 描述 厂商 生命周期 风险等级
对比 FDC602P
小信号场效应晶体管
当前料
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
ON Semiconductor Active
对比 FDC602P
小信号场效应晶体管
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Fairchild Semiconductor Corporation Transferred
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对比栏