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FDC655BN
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FDC655BN

Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
市场均价:
¥3.0119
市场总库存:
1,592,579
生命周期状态:
Transferred
风险等级:
3.82
设计
产品
长期
参数规格
数据手册
FDC655BN
Fairchild Semiconductor Corporation
详细参数
参数名称 参数值
Brand Name Fairchild Semiconductor
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
生命周期 Transferred
零件包装代码 SSOT
包装说明 SMALL OUTLINE, R-PDSO-G6
针数 6
制造商包装代码 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN代码 EAR99
HTS代码 8541.29.00.95
风险等级 3.82
Samacsys Confidence 3
Samacsys Status Released
2D Presentation https://componentsearchengine.com/2D/0T/1059581.1.1.png
Schematic Symbol https://componentsearchengine.com/symbol.php?partID=1059581
PCB Footprint https://componentsearchengine.com/footprint.php?partID=1059581
3D View https://componentsearchengine.com/viewer/3D.php?partID=1059581
Samacsys PartID 1059581
Samacsys Image https://componentsearchengine.com/Images/9/FDC655BN.jpg
Samacsys Thumbnail Image https://componentsearchengine.com/Thumbnails/1/FDC655BN.jpg
Samacsys Pin Count 6
Samacsys Part Category MOSFET (N-Channel)
Samacsys Package Category SOT23 (6-Pin)
Samacsys Footprint Name sot-23
Samacsys Released Date 2019-09-18 14:16:04
Is Samacsys N
其他特性 ULTRA-LOW RESISTANCE
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 30 V
最大漏极电流 (Abs) (ID) 6.3 A
最大漏极电流 (ID) 6.3 A
最大漏源导通电阻 0.025 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 90 pF
JESD-30 代码 R-PDSO-G6
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 6
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 N-CHANNEL
最大功率耗散 (Abs) 1.6 W
认证状态 Not Qualified
子类别 FET General Purpose Power
表面贴装 YES
端子面层 Matte Tin (Sn)
端子形式 GULL WING
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
展开剩余 43 条 折叠部分参数
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替代料
认证替代料(51)
FE 功能等同替代料,包含 FFF 形态、装配、功能兼容替代料 (51):
对比 型号 厂商 描述 生命周期 风险等级
对比 FDC655BN
小信号场效应晶体管
当前料
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
Transferred
对比 FDC658AP
小信号场效应晶体管
ON Semiconductor
Single P-Channel Logic Level PowerTrench® MOSFET, -30V, -4A, 50mΩ, 3000-REEL
Active
对比 NTGS5120PT1G
小信号场效应晶体管
ON Semiconductor
Single P-Channel Power MOSFET -60V -2.9A 111mΩ, TSOP-6, 3000-REEL
Active
对比 FDC637BNZ
小信号场效应晶体管
ON Semiconductor
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.2A, 24mΩ, 3000-REEL
Active
对比 FDS6930B
小信号场效应晶体管
ON Semiconductor
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ, 2500-REEL
Active
对比 NTUD3169CZT5G
小信号场效应晶体管
ON Semiconductor
Complementary Small Signal MOSFET 20V, SOT-963 1x1, 0.35P, 8000-REEL
Active
对比 SI3433CDV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 5200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Active
对比 SI6926ADQ-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal
Active
对比 SI1967DH-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
Trans MOSFET P-CH 20V 1A 6-Pin SC-70 T/R
Active
对比 SI6926ADQ-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal
Active
对比 SI3459BDV-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 2.2 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Active
对比 FDC636P
小信号场效应晶体管
Rochester Electronics LLC
2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Active
对比 FDW2503NZ
小信号场效应晶体管
Rochester Electronics LLC
5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8
Active
对比 NTUD3128NT5G
小信号场效应晶体管
Rochester Electronics LLC
160mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 527AA-01, 6 PIN
Active
对比 2N5909
小信号场效应晶体管
Solitron Devices Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78,
Active
对比 NTGS3441BT1G
小信号场效应晶体管
Rochester Electronics LLC
2200mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 318G-02, TSOP-6
Active
对比 2N5515
小信号场效应晶体管
Solitron Devices Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71,
Active
对比 U423
小信号场效应晶体管
Calogic Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78,
Active
对比 NTGS1135PT1G
小信号场效应晶体管
Rochester Electronics LLC
SMALL SIGNAL, FET, LEAD FREE, CASE 318G-02, TSOP-6
Active
对比 2N3955A
小信号场效应晶体管
Solitron Devices Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71,
Active
对比 U424
小信号场效应晶体管
Calogic Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78,
Active
对比 NTGS3447PT1G
小信号场效应晶体管
Rochester Electronics LLC
3.4mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 318G, TSOP-6
Active
对比 SI6876BEDQ-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSSOP-8, FET General Purpose Small Signal
Active
对比 IRF7757GPBF
小信号场效应晶体管
Infineon Technologies AG
Small Signal Field-Effect Transistor, 4.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN AND LEAD FREE, TSSOP-8
Active
对比 SI3441DV
小信号场效应晶体管
Rochester Electronics LLC
3500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Active
对比 2N5906
小信号场效应晶体管
Solitron Devices Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78,
Active
对比 2N5905
小信号场效应晶体管
Solitron Devices Inc
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78,
Active
对比 STT4PF20V
小信号场效应晶体管
STMicroelectronics
3000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 6 PIN
Obsolete
对比 PMGD280UN
功率场效应晶体管
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Transferred
对比 PMGD290XN
小信号场效应晶体管
NXP Semiconductors
TRANSISTOR 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN, FET General Purpose Small Signal
Transferred
对比 SI4804CDY-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 7100 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Not Recommended
对比 SI3441BDV-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 2450 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 RSQ035P03TR
小信号场效应晶体管
ROHM Semiconductor
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
Not Recommended
对比 SI6925ADQ-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 3300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal
Obsolete
对比 RSQ030P03TR
小信号场效应晶体管
ROHM Semiconductor
Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN
Obsolete
对比 SI6925ADQ-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 3300 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal
Obsolete
对比 SI3445ADV-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 4400 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 SI6963BDQ-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TSSOP-8
Obsolete
对比 SI3441DV-T1
小信号场效应晶体管
Temic Semiconductors
Small Signal Field-Effect Transistor, 1-Element, Silicon,
Transferred
对比 SI6963BDQ-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 3400 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal
Obsolete
对比 SI3441BDV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 2450 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 SI1913DH-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 880 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General Purpose Small Signal
Obsolete
对比 US6U37TR
小信号场效应晶体管
ROHM Semiconductor
Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN
Not Recommended
对比 SI4330DY-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Transferred
对比 SI1069X-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
P-CHANNEL 20-V(D-S) MOSFET - Tape and Reel
Obsolete
对比 BSD235NL6327
小信号场效应晶体管
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.95A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
Obsolete
对比 SI4330DY-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Transferred
对比 SI4974DY-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 4400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal
Obsolete
对比 SI3441BDV-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 2450 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 SI6963DQ-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Obsolete
对比 FDC634P_NL
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
对比 SI1903DL-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 410 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN, FET General Purpose Small Signal
Obsolete
1 - 5 / 51个替代料
价格 & 库存
市场价格分析
当前暂无数据分析
  • 1. Rochester Electronics ¥1.4247
价格走势
当前暂无数据分析
库存走势
当前暂无数据分析
分销商库存
市场总库存
1,592,579
  • 1. New Advantage Corporation 1,591,614
  • 2. Bristol Electronics 555
  • 3. Rochester Electronics 410
同型号不同厂商
同型号不同厂商的对比(1)
对比 型号 描述 厂商 生命周期 风险等级
对比 FDC655BN
小信号场效应晶体管
当前料
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
Fairchild Semiconductor Corporation Transferred
对比 FDC655BN
功率场效应晶体管
N-Channel PowerTrench® MOSFET, Logic Level, 30 V, 6.3 A, 25 mΩ, 3000-REEL
ON Semiconductor Active
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