FQD12N20LTM
晶体管 > 功率场效应晶体管

FQD12N20LTM

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
市场均价:
¥5.6996
市场总库存:
63900
生命周期状态:
Active
风险等级:
0.76
设计
产品
长期
参数规格
数据手册
FQD12N20LTM
ON Semiconductor
详细参数
参数名称 参数值
Brand Name ON Semiconductor
是否无铅 不含铅 不含铅
生命周期 Active
IHS 制造商 ON SEMICONDUCTOR
包装说明 SMALL OUTLINE, R-PSSO-G2
制造商包装代码 369AS
Reach Compliance Code not_compliant
ECCN代码 EAR99
HTS代码 8541.29.00.95
Factory Lead Time [object Object]
风险等级 0.76
雪崩能效等级(Eas) 210 mJ
外壳连接 DRAIN
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 200 V
最大漏极电流 (Abs) (ID) 9 A
最大漏极电流 (ID) 9 A
最大漏源导通电阻 0.32 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-252
JESD-30 代码 R-PSSO-G2
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 2
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
最低工作温度 -55 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 N-CHANNEL
最大功率耗散 (Abs) 55 W
最大脉冲漏极电流 (IDM) 36 A
认证状态 Not Qualified
子类别 FET General Purpose Power
表面贴装 YES
端子面层 Tin (Sn)
端子形式 GULL WING
端子位置 SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
展开剩余 30 条 折叠部分参数
3dlogo ECAD 模型
ECAD 模型信息
该型号暂时没有模型信息。
型号:FQD12N20LTM
制造商:ON Semiconductor
替代料
FFF 形态、装配、功能兼容替代料(3) FE 功能等同替代料(36)
对比 型号 描述 厂商 生命周期 风险等级
对比 FQD12N20LTM
功率场效应晶体管
当前料
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 FQD12N20LTM
功率场效应晶体管
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 FQD12N20LTF
功率场效应晶体管
9A, 200V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Rochester Electronics LLC Active
对比 FQD12N20L
功率场效应晶体管
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild Semiconductor Corporation Obsolete
对比 型号 描述 厂商 生命周期 风险等级
对比 FQD12N20LTM
功率场效应晶体管
当前料
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 STD20NF20
功率场效应晶体管
N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package
STMicroelectronics Active
对比 FQD12N20LTM
功率场效应晶体管
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 FQD18N20V2TM
功率场效应晶体管
Power MOSFET, N-Channel, QFET®, 200 V, 15 A, 140 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 SI7450DP-T1-E3
功率场效应晶体管
Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO T/R
Vishay Intertechnologies Active
对比 FQD12N20TM
功率场效应晶体管
Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 SI7450DP-T1-GE3
功率场效应晶体管
Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO T/R
Vishay Intertechnologies Active
对比 FDD2670
功率场效应晶体管
N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ, 2500-REEL
ON Semiconductor Active
对比 PSMN130-200D,118
功率场效应晶体管
N-channel TrenchMOS SiliconMAX standard level FET DPAK 3-Pin
Nexperia Active
对比 FQD12N20LTF
功率场效应晶体管
9A, 200V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Rochester Electronics LLC Active
对比 FQD12N20TF
功率场效应晶体管
9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
Rochester Electronics LLC Active
对比 FQD18N20V2TF
功率场效应晶体管
15A, 200V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3
Rochester Electronics LLC Active
对比 SI7450DP-E3
功率场效应晶体管
TRANSISTOR 3.2 A, 200 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power
Vishay Intertechnologies Active
对比 IRFR13N20DPBF
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Infineon Technologies AG Obsolete
对比 PSMN130-200D
功率场效应晶体管
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Philips Semiconductors Transferred
对比 SI7450DP
其他晶体管
Transistor
Vishay Intertechnologies Transferred
对比 IRFR13N20D
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier Transferred
对比 FQD12N20L
功率场效应晶体管
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild Semiconductor Corporation Obsolete
对比 EPC2012C
功率场效应晶体管
Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Efficient Power Conversion Contact Manufacturer
对比 IRFR13N20DTRR
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier Obsolete
对比 IRFR13N20DTRLP
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
International Rectifier Transferred
对比 FQD12N20
功率场效应晶体管
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild Semiconductor Corporation Obsolete
对比 PHD14NQ20T
功率场效应晶体管
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Philips Semiconductors Transferred
对比 STD20N20T4
功率场效应晶体管
18A, 200V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
STMicroelectronics Obsolete
对比 HUF75925D3ST
功率场效应晶体管
Power Field-Effect Transistor, 11A I(D), 200V, 0.275ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Fairchild Semiconductor Corporation Obsolete
对比 PSMN130-200D/T3
功率场效应晶体管
TRANSISTOR 20 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
NXP Semiconductors Transferred
对比 IRFR13N20DTRRP
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
International Rectifier Obsolete
对比 EPC2012CENGR
功率场效应晶体管
Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.70 X 0.90 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Efficient Power Conversion Contact Manufacturer
对比 934057072118
功率场效应晶体管
TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power
NXP Semiconductors Obsolete
对比 FDD2670_NL
功率场效应晶体管
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild Semiconductor Corporation Obsolete
对比 934055761118
功率场效应晶体管
Power Field-Effect Transistor
Nexperia Not Recommended
对比 IRFR13N20DTR
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier Obsolete
对比 STD20N20
功率场效应晶体管
18A, 200V, 0.125ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3
STMicroelectronics Obsolete
对比 IRFR13N20DTRL
功率场效应晶体管
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier Obsolete
对比 FDB2670L99Z
功率场效应晶体管
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Fairchild Semiconductor Corporation Obsolete
对比 FDB2670S62Z
功率场效应晶体管
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Fairchild Semiconductor Corporation Obsolete
对比 FDB2670L86Z
功率场效应晶体管
Power Field-Effect Transistor, 19A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Fairchild Semiconductor Corporation Obsolete
1 - 5 / 36个替代料
价格 & 库存
市场价格分析
当前暂无数据分析
  • 1. Newark ¥3.3813
  • 2. TME Electronic Components ¥6.0541
  • 3. element14 ¥6.9721
  • 4. Future Electronics ¥7.0099
  • 5. Newark ¥7.9863
  • 6. Farnell ¥8.1551
  • 7. Farnell ¥8.1551
价格走势
当前暂无数据分析
库存走势
当前暂无数据分析
分销商库存
市场总库存
63,900
  • 1. Future Electronics 47,500
  • 2. Bristol Electronics 5,615
  • 3. RS Components 5,030
  • 4. Farnell 2,359
  • 5. TME Electronic Components 1,566
  • 6. element14 915
  • 7. Newark 915
同型号不同厂商
同型号不同厂商的对比(1)
对比 型号 描述 厂商 生命周期 风险等级
对比 FQD12N20LTM
功率场效应晶体管
当前料
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
ON Semiconductor Active
对比 FQD12N20LTM
功率场效应晶体管
Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fairchild Semiconductor Corporation Transferred
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