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| 参数名称 | 参数值 |
|---|---|
| Source Content uid | ISL2111ABZ |
| Brand Name | Renesas |
| 是否无铅 |  不含铅 |
| 是否Rohs认证 |  符合 |
| 生命周期 | Active |
| Objectid | 8321699774 |
| 零件包装代码 | SOICN |
| 包装说明 | SOIC-8 |
| 针数 | 8 |
| 制造商包装代码 | M8.15 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8542.39.00.01 |
| Factory Lead Time | 26 weeks 1 day |
| 风险等级 | 1.1 |
| Samacsys Description | The ISL2110, ISL2111 are 100V, high frequency, half-bridge N-Channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. Peak output pull-up/pull-down current has been increased to 3A/4A, which significantly reduces switching power losses and eliminates the need for external totem-pole buffers in many applications. Also, the low end of the VDD operational supply range has been extended to 8VDC. The ISL2110 has additional in |
| Samacsys Manufacturer | Renesas Electronics |
| Samacsys Modified On | 2023-10-24 19:30:29 |
| YTEOL | 7.75 |
| 高边驱动器 | YES |
| 接口集成电路类型 | HALF BRIDGE BASED MOSFET DRIVER |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e3 |
| 长度 | 4.9 mm |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -40 °C |
| 输出特性 | PUSH-PULL |
| 标称输出峰值电流 | 4 A |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 座面最大高度 | 1.75 mm |
| 最大压摆率 | 5.5 mA |
| 最大供电电压 | 14 V |
| 最小供电电压 | 8 V |
| 标称供电电压 | 12 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | AUTOMOTIVE |
| 端子面层 | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 30 |
| 断开时间 | 0.06 µs |
| 接通时间 | 0.06 µs |
| 宽度 | 3.9 mm |
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