NTD20N06T4G
晶体管 > 功率场效应晶体管

NTD20N06T4G

ON Semiconductor
Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
市场均价:
¥6.2095
市场总库存:
41239
生命周期状态:
Active
风险等级:
0.59
设计
产品
长期
参数规格
数据手册
NTD20N06T4G
ON Semiconductor
详细参数
参数名称 参数值
Brand Name ON Semiconductor
是否无铅 不含铅 不含铅
生命周期 Active
IHS 制造商 ON SEMICONDUCTOR
包装说明 DPAK-3
针数 3
制造商包装代码 369C
Reach Compliance Code not_compliant
ECCN代码 EAR99
HTS代码 8541.29.00.95
Factory Lead Time [object Object]
风险等级 0.59
Samacsys Confidence 3
Samacsys Status Released
Schematic Symbol https://componentsearchengine.com/symbol.php?partID=226784
PCB Footprint https://componentsearchengine.com/footprint.php?partID=226784
雪崩能效等级(Eas) 170 mJ
外壳连接 DRAIN
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V
最大漏极电流 (Abs) (ID) 20 A
最大漏极电流 (ID) 20 A
最大漏源导通电阻 0.046 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PSSO-G2
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 2
工作模式 ENHANCEMENT MODE
最高工作温度 175 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) 260
极性/信道类型 N-CHANNEL
最大功率耗散 (Abs) 60 W
最大脉冲漏极电流 (IDM) 60 A
认证状态 Not Qualified
子类别 FET General Purpose Power
表面贴装 YES
端子面层 Tin (Sn)
端子形式 GULL WING
端子位置 SINGLE
处于峰值回流温度下的最长时间 40
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
展开剩余 33 条 折叠部分参数
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替代料
FFF 形态、装配、功能兼容替代料(5) FE 功能等同替代料(44)
对比 型号 描述 厂商 生命周期 风险等级
对比 NTD20N06T4G
功率场效应晶体管
当前料
Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor Active
对比 NTD20N06G
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369A-13, DPAK-3
Rochester Electronics LLC Active
对比 NTD20N06T4
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
Rochester Electronics LLC Active
对比 NTDV20N06T4G-VF01
功率场效应晶体管
Single N-Channel Power MOSFET 60V 20A 46mΩ, 2500-REEL
ON Semiconductor Not Recommended
对比 NTD20N06
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
ON Semiconductor Obsolete
对比 NTDV20N06T4G
功率场效应晶体管
Single N-Channel Power MOSFET 60V 20A 46mΩ Power MOSFET 60V 20A 46 mOhm Single N-Channel DPAK., DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor Contact Manufacturer
对比 型号 描述 厂商 生命周期 风险等级
对比 NTD20N06T4G
功率场效应晶体管
当前料
Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor Active
对比 NTD5867NLT4G
功率场效应晶体管
Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
ON Semiconductor Active
对比 NTD20N06LT4G
功率场效应晶体管
Single N-Channel Logic Level Power MOSFET 60V, 20A, 48mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor Active
对比 IRFR4105TRPBF
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Infineon Technologies AG Active
对比 NTD5867NL-1G
功率场效应晶体管
20A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, CASE 369D-01, IPAK-3
Rochester Electronics LLC Active
对比 FHK20N06
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Fenghua (HK) Electronics Ltd Active
对比 NTD20N06L
功率场效应晶体管
20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
Rochester Electronics LLC Active
对比 NTD20N06G
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369A-13, DPAK-3
Rochester Electronics LLC Active
对比 NTD20N06LT4
功率场效应晶体管
20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
Rochester Electronics LLC Active
对比 2SK2869S-E
功率场效应晶体管
20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
Renesas Electronics Corporation Active
对比 IRFR4105TRRPBF
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Infineon Technologies AG Active
对比 SSPL6040D
功率场效应晶体管
Power Field-Effect Transistor, 33A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3/2
Suzhou Good-Ark Electronics Co Ltd Active
对比 NTD20N06T4
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
Rochester Electronics LLC Active
对比 SPD25N06S240NTMA1
功率场效应晶体管
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
Infineon Technologies AG Active
对比 IPD30N06S3L20ATMA1
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN
Infineon Technologies AG Active
对比 AUIRFR4105
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Infineon Technologies AG Obsolete
对比 NTDV20N06T4G-VF01
功率场效应晶体管
Single N-Channel Power MOSFET 60V 20A 46mΩ, 2500-REEL
ON Semiconductor Not Recommended
对比 IRFR4105
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
Infineon Technologies AG Obsolete
对比 IRFR4105PBF
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Infineon Technologies AG Obsolete
对比 NTD20N06
功率场效应晶体管
20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
ON Semiconductor Obsolete
对比 IRFR4105TRLPBF
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
International Rectifier Transferred
对比 NP22N055SLE
功率场效应晶体管
Power Field-Effect Transistor, 22A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, MP-3ZK, 3 PIN
NEC Electronics America Inc Obsolete
对比 IRFU4105PBF
功率场效应晶体管
Power Field-Effect Transistor,
Infineon Technologies AG Obsolete
对比 2SK2869STL-E
功率场效应晶体管
Nch Single Power MOSFET 60V 20A 45mohm DPAK(S)/TO-252
Renesas Electronics Corporation Not Recommended
对比 IRFU4105
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3
International Rectifier Obsolete
对比 MTP36N06VG
功率场效应晶体管
32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, CASE 221A-09, 3 PIN
ON Semiconductor Obsolete
对比 NTDV20N06T4G
功率场效应晶体管
Single N-Channel Power MOSFET 60V 20A 46mΩ Power MOSFET 60V 20A 46 mOhm Single N-Channel DPAK., DPAK (SINGLE GAUGE) TO-252, 2500-REEL
ON Semiconductor Contact Manufacturer
对比 AUIRFR4105TRL
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Infineon Technologies AG Obsolete
对比 NP22N055SLE-E2-AY
功率场效应晶体管
Nch Single Power MOSFET 55V 22A 37mohm MP-3ZK/TO-252 Automotive
Renesas Electronics Corporation Obsolete
对比 AUIRFR4105TR
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Infineon Technologies AG Obsolete
对比 AUIRFR4105TRR
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Infineon Technologies AG Obsolete
对比 MTD20N06HDT4
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Motorola Semiconductor Products Transferred
对比 IRFR4105TR
功率场效应晶体管
Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
International Rectifier Obsolete
对比 2SK2869S
功率场效应晶体管
20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
Renesas Electronics Corporation Not Recommended
对比 NTD20N06L-001
功率场效应晶体管
20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
ON Semiconductor Obsolete
对比 NTD20N06L-1
功率场效应晶体管
20A, 60V, 0.048ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
ON Semiconductor Obsolete
对比 FS30ASH-06-T1
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mitsubishi Electric Obsolete
对比 FS30VSH-06-T1
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
Mitsubishi Electric Obsolete
对比 FS30ASH-06-T2
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mitsubishi Electric Obsolete
对比 FS30ASJ-06-T2
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mitsubishi Electric Obsolete
对比 FS30VSH-06-T2
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN
Mitsubishi Electric Obsolete
对比 FS30ASJ-06-T1
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mitsubishi Electric Obsolete
对比 FS30VSJ-06-T1
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Mitsubishi Electric Obsolete
对比 FS30VSJ-06-T2
功率场效应晶体管
Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN
Mitsubishi Electric Obsolete
对比 MTD20N06HD
功率场效应晶体管
20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
ON Semiconductor Obsolete
1 - 5 / 44个替代料
价格 & 库存
市场价格分析
当前暂无数据分析
  • 1. Rochester Electronics ¥3.4680
  • 2. Newark ¥3.8229
  • 3. Farnell ¥6.7397
  • 4. Farnell ¥6.7397
  • 5. element14 ¥6.9269
  • 6. Newark ¥7.1699
价格走势
当前暂无数据分析
库存走势
当前暂无数据分析
分销商库存
市场总库存
41,239
  • 1. Rochester Electronics 37,457
  • 2. Farnell 1,703
  • 3. element14 1,498
  • 4. Newark 581
  • 5. RS Components 0
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