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STT5PF20V
晶体管 > 小信号场效应晶体管

STT5PF20V

STMicroelectronics
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6
市场均价:
-
市场总库存:
-
生命周期状态:
Obsolete
风险等级:
5.25
设计
产品
长期
参数规格
数据手册
STT5PF20V
STMicroelectronics
详细参数
参数名称 参数值
是否Rohs认证 符合 符合
生命周期 Obsolete
零件包装代码 TSOP
包装说明 TSOP-6
针数 6
Reach Compliance Code compliant
ECCN代码 EAR99
风险等级 5.25
Is Samacsys N
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 20 V
最大漏极电流 (Abs) (ID) 3.2 A
最大漏极电流 (ID) 5 A
最大漏源导通电阻 0.1 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G6
JESD-609代码 e3
湿度敏感等级 1
元件数量 1
端子数量 6
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) 260
极性/信道类型 P-CHANNEL
最大功率耗散 (Abs) 1.6 W
认证状态 Not Qualified
子类别 Other Transistors
表面贴装 YES
端子面层 Matte Tin (Sn)
端子形式 GULL WING
端子位置 DUAL
处于峰值回流温度下的最长时间 30
晶体管应用 SWITCHING
晶体管元件材料 SILICON
Base Number Matches 1
展开剩余 23 条 折叠部分参数
3dlogo ECAD 模型
ECAD 模型信息
该型号暂时没有模型信息。
型号:STT5PF20V
制造商:STMicroelectronics
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替代料
认证替代料(37)
FE 功能等同替代料,包含 FFF 形态、装配、功能兼容替代料 (37):
对比 型号 厂商 描述 生命周期 风险等级
对比 STT5PF20V
小信号场效应晶体管
当前料
STMicroelectronics
5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6
Obsolete
对比 FDC602P
小信号场效应晶体管
FFF
ON Semiconductor
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 35mΩ, 3000-REEL
Active
对比 FDC604P
小信号场效应晶体管
FFF
ON Semiconductor
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ, 3000-REEL
Active
对比 SI3445DV
小信号场效应晶体管
FFF
Rochester Electronics LLC
5500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6
Active
对比 SI3469DV-T1-E3
小信号场效应晶体管
FFF
Vishay Intertechnologies
Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R
Not Recommended
对比 SI3445DVS62Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 SI3445DVD84Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 FDC604P_NL
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 FDC602P_NL
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
对比 SI3445DVL99Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 SI3469DV-T1-GE3
小信号场效应晶体管
FFF
Vishay Intertechnologies
P-CH MOSFET TSOP-6 20V 30MOHM @ 10V - Tape and Reel
Not Recommended
对比 SI3495DV-T1-E3
小信号场效应晶体管
FFF
Vishay Intertechnologies
Trans MOSFET P-CH 20V 5.3A 6-Pin TSOP T/R
Obsolete
对比 SI3445DVD87Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 FDC602PD87Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 FDC604PD87Z
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 SI3445DV_NL
小信号场效应晶体管
FFF
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 FDC640P
小信号场效应晶体管
ON Semiconductor
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ, 3000-REEL
Active
对比 FDC638P
小信号场效应晶体管
ON Semiconductor
P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ, 3000-REEL
Active
对比 UPA1913TE-A
小信号场效应晶体管
Renesas Electronics Corporation
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN
Active
对比 SI3403DV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 5000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 FDC640P_NL
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
对比 FDC638PL99Z
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Obsolete
对比 SI3493BDV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Not Recommended
对比 UPA1913TE
小信号场效应晶体管
Renesas Electronics Corporation
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-95, 6 PIN
Not Recommended
对比 UPA1915TE
小信号场效应晶体管
Renesas Electronics Corporation
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
Not Recommended
对比 FDC640P_NF073
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
对比 SI3493DV-T1-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 SI3493DV-T1
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Obsolete
对比 SI3493DV
其他晶体管
Vishay Intertechnologies
Transistor
Transferred
对比 FDC638P_NF073
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
对比 FDC638PD87Z
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 SI3493DV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
Obsolete
对比 FDC640PD87Z
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Obsolete
对比 SI3983DV-T1-GE3
小信号场效应晶体管
Vishay Intertechnologies
Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Obsolete
对比 SI3493DV-E3
小信号场效应晶体管
Vishay Intertechnologies
TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose Small Signal
Obsolete
对比 UPA1915TE-A
小信号场效应晶体管
Renesas Electronics Corporation
4500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-95, 6 PIN
Not Recommended
对比 SI3879DV-T1-GE3
功率场效应晶体管
Vishay Intertechnologies
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Obsolete
对比 FDC638P_NL
小信号场效应晶体管
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Obsolete
1 - 5 / 37个替代料
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