Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 刷新周期 | 访问模式 | 内存集成电路类型 | 其他特性 | I/O 类型 | 交错的突发长度 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 自我刷新 | 连续突发长度 | 最大待机电流 | 最小待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | mfrid | Modified On | 包装说明 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | 零件包装代码 | 针数 | Date Of Intro | |
对比 | AS4C16M16SA-6TIN | Alliance Memory Inc | 查询价格 | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 25 mA | 60 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:35:47 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | [object Object] | 4 | |||||||||||
对比 | AS4C16M16SA-6TCN | Alliance Memory Inc | 查询价格 | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5 ns | 166 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 25 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 260 | 40 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:59:50 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | [object Object] | 4 | ||||||||||
对比 | AS4C4M16SA-6TIN | Alliance Memory Inc | 查询价格 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:35:59 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 4 | |||||||||||||||||||
对比 | AS4C4M16SA-7TCN | Alliance Memory Inc | 查询价格 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:35:47 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 4 | ||||||||||||||||||||
对比 | AS4C16M16SA-7TCN | Alliance Memory Inc | 查询价格 | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 20 mA | 3 V | 55 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:36:06 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | [object Object] | 4 | |||||||||||
对比 | AS4C8M16SA-6TIN | Alliance Memory Inc | 查询价格 | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:54:44 | 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 4 | |||||||||||||||||
对比 | MT47H128M16RT-25E:C | Micron Technology Inc | 查询价格 | Yes | Yes | Active | 2.1475 Gbit | 16 | 128MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 12 mA | 330 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 9 mm | 2190 | 2024-04-24 09:31:43 | 9 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | compliant | EAR99 | 8542.32.00.36 | [object Object] | 4.75 | BGA | 84 | |||||||
对比 | IS42S32200L-7TL | Integrated Silicon Solution Inc | 查询价格 | Yes | End Of Life | 67.1089 Mbit | 32 | 2MX32 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 90 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G86 | Not Qualified | 70 °C | 86 | PLASTIC/EPOXY | TSOP2 | TSSOP86,.46,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 500 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | 2024-04-24 08:33:03 | TSOP2, TSSOP86,.46,20 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 0.89 | TSOP2 | 86 | |||||||||||
对比 | IS42S16800F-7TL | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | End Of Life | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | 2024-04-24 08:33:03 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 0.89 | TSOP2 | 54 | |||||
对比 | AS4C8M16SA-7TCN | Alliance Memory Inc | 查询价格 | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | e3 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 08:36:06 | 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 4 | ||||||||||||||||||||
对比 | IS42S16800F-7TLI | Integrated Silicon Solution Inc | 查询价格 | Yes | End Of Life | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 100 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | 2024-04-24 09:19:17 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 0.89 | TSOP2 | 54 | |||||
对比 | MT41K256M8DA-125:K | Micron Technology Inc | 查询价格 | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 156 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 95 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 8 mm | 2190 | 2024-04-24 09:29:01 | TFBGA, BGA78,9X13,32 | not_compliant | EAR99 | 8542.32.00.36 | [object Object] | 5.1 | BGA | 78 | |||||||
对比 | MT41K256M16TW-107:P | Micron Technology Inc | 查询价格 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | 2024-04-24 09:22:39 | FBGA-96 | not_compliant | EAR99 | 8542.32.00.36 | [object Object] | 5.1 | ||||||||||||||||||||||
对比 | MT48LC8M16A2P-6A:L | Micron Technology Inc | 查询价格 | Yes | Active | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 167 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2.5 mA | 100 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2190 | 2024-04-24 09:22:50 | TSOP2, TSOP54,.46,32 | compliant | EAR99 | 8542.32.00.02 | [object Object] | 4 | TSOP2 | 54 | ||||||||
对比 | AS4C16M16SA-7TCNTR | Alliance Memory Inc | 查询价格 | Yes | Active | 268.4355 Mbit | 16 | 16MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | YES | 1,2,4,8,FP | 20 mA | 55 µA | 3.6 V | 3 V | CMOS | R-PDSO-G54 | 3 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 1689 | 2024-04-24 09:01:20 | TSOP2-54 | compliant | Taiwan | EAR99 | 8542.32.00.24 | [object Object] | 4 | |||||||||||||||
对比 | AS4C4M16SA-6TINTR | Alliance Memory Inc | 查询价格 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e3 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin (Sn) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | 1689 | 2024-04-24 08:55:38 | FBGA-54 | compliant | Taiwan | EAR99 | 8542.32.00.02 | [object Object] | 4 | 2018-10-04 | ||||||||||||||||||
对比 | MT41K64M16TW-107:J | Micron Technology Inc | 查询价格 | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.35 V | 195 ps | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 219 µA | 1.45 V | 1.283 V | CMOS | R-PBGA-B96 | Not Qualified | e1 | NOT SPECIFIED | NOT SPECIFIED | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | 2190 | 2024-04-24 09:22:50 | 8 X 14 MM, LEAD FREE, FBGA-96 | compliant | EAR99 | 8542.32.00.32 | [object Object] | 5.1 | ||||||||||||
对比 | AS4C32M16D2A-25BCN | Alliance Memory Inc | 查询价格 | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 400 ps | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | 3 | 85 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 1689 | 2024-04-24 08:56:35 | FBGA-84 | compliant | Taiwan | EAR99 | 8542.32.00.28 | [object Object] | 4 | ||||||||||||||||||||||
对比 | AS4C32M16D2A-25BAN | Alliance Memory Inc | 查询价格 | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 1.8 V | 400 ps | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | 3 | 85 °C | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 1689 | 2024-04-24 09:01:37 | FBGA-84 | compliant | Taiwan | EAR99 | 8542.32.00.28 | [object Object] | 4 | ||||||||||||||||||||||
对比 | IS42S16320F-7TLI | Integrated Silicon Solution Inc | 查询价格 | Yes | Active | 536.8709 Mbit | 16 | 32MX16 | 3.3 V | 5.4 ns | 143 MHz | 8192 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 4 mA | 160 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | 2070 | 2024-04-24 08:35:33 | TSOP2, TSOP54,.46,32 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.28 | [object Object] | 4 |