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EPROM: 23,317 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (2)
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制造商 (50)
内存密度 (17)
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内存宽度 (4)
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组织 (32)
电源 (12)
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标称供电电压 (Vsup) (4)
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Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证 生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup) 电源 最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 I2C控制字节 功能数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压 串行总线类型 最大待机电流 最大压摆率 最大供电电压 (Vsup) 最小供电电压 (Vsup) 技术 温度等级 最长写入周期时间 (tWC) 写保护 JESD-30 代码 认证状态 JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别 处于峰值回流温度下的最长时间 端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装 端子面层 端子形式 端子节距 端子位置 座面最大高度 长度 宽度 IHS 制造商
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
交付时间
Samacsys Description
制造商包装代码
对比
QP7C271-45WC
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 45 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 5.5 V 4.5 V CMOS COMMERCIAL R-GDIP-T28 70 °C 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL TELEDYNE E2V (UK) LTD DIP 0.300 INCH, CERAMIC, WINDOWED, DIP-28 28 compliant EAR99 8542.32.00.61
对比
5962-8606305YA
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 150 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD TELEDYNE E2V (UK) LTD QFJ CERAMIC, LCC-32 32 compliant EAR99 8542.32.00.61
对比
AT93C46DY6-YH-E
Microchip Technology Inc 查询价格
Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 85 °C -40 °C 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC HVSON, SOLCC8,.11,20 compliant EAR99 8542.32.00.51 8 weeks EEPROM 1.8-5.5V, 2MHz, Ind Tmp, 8-UDFN
对比
5962-8606304XA
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 170 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 50 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL TELEDYNE E2V (UK) LTD DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
对比
AT93C46DY6-YH-T
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) NO LEAD 500 µm DUAL 600 µm 3 mm 2 mm MICROCHIP TECHNOLOGY INC HVSON, SOLCC8,.11,20 compliant 8 weeks
对比
5962-8606306XA
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 120 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 300 µA 65 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.72 mm 37.215 mm 15.24 mm TELEDYNE E2V (UK) LTD DIP, DIP28,.6 compliant EAR99 8542.32.00.61
对比
CAT24C128YI-GT3
ON Semiconductor 查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) ON SEMICONDUCTOR TSSOP , 8 compliant EAR99 8542.32.00.51 8 weeks 948AL
对比
CAT24C128HU4IGT3
ON Semiconductor 查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 NOT SPECIFIED NOT SPECIFIED Nickel/Palladium/Gold (Ni/Pd/Au) ON SEMICONDUCTOR , 8 compliant 4 weeks 128-Kb I2C Serial CMOS EEPROM Memory 517AZ
对比
CAT24C128WI-GT3
ON Semiconductor 查询价格
Yes Active 2/5 V 100 1000000 Write/Erase Cycles 1010DDDR I2C HARDWARE Not Qualified e4 1 260 40 Nickel/Palladium/Gold (Ni/Pd/Au) ON SEMICONDUCTOR SOIC , 8 compliant EAR99 8542.32.00.51 EEPROM Serial-I2C 128K 16Kx8 1.8-5V SO8 ... more 751BD
对比
AT93C46E-PU
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C NOT APPLICABLE NOT APPLICABLE 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO Matte Tin (Sn) - annealed THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm MICROCHIP TECHNOLOGY INC DIP, DIP8,.3 compliant 5 weeks
对比
MX25L25645GZNI-08G
Macronix International Co Ltd 查询价格
Yes Active NOT SPECIFIED NOT SPECIFIED MACRONIX INTERNATIONAL CO LTD , unknown 16 weeks
对比
AT93C46DN-SH-B
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOP, SOP8,.25 compliant 6 weeks AT93C46DN-SH-B, Serial EEPROM Memory 1kbit, Serial-3 Wire, 1.8V, 8-Pin SOIC
对比
AT93C46E-TH-B
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSOP1, TSSOP8,.25 compliant 7 weeks Atmel AT93C46E-TH-B EEPROM Memory, 1kbit, 1.8 → 5.5 V 8-Pin TSSOP
对比
AT93C46D-TH-T
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSOP1 TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC TSOP1, TSSOP8,.25 compliant 6 weeks EEPROM 8 PDIP 1.8V- 1.8V
对比
AT93C46EN-SH-T
Microchip Technology Inc 查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2/5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN 100 1000000 Write/Erase Cycles SEPARATE 1 64 64 words SYNCHRONOUS SERIAL 5 V MICROWIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms SOFTWARE R-PDSO-G8 Not Qualified e4 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOP, SOP8,.25 compliant 6 weeks EEPROM 8 1.8V - 8 1.8V
对比
NTE2716
NTE Electronics Inc 查询价格
Yes Active 16.384 kbit 8 2KX8 5 V 5 V 350 ns UVPROM COMMON 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 25 V 160 µA 5.25 V 4.75 V NMOS COMMERCIAL R-XDIP-T24 Not Qualified 70 °C NOT SPECIFIED NOT SPECIFIED 24 UNSPECIFIED DIP DIP24,.6 RECTANGULAR IN-LINE NO THROUGH-HOLE 2.54 mm DUAL NTE ELECTRONICS INC DIP DIP, DIP24,.6 24 unknown EAR99 8542.32.00.61
对比
5962-8606310UA
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 45 ns UVPROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 12.5 V 45 mA 130 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C 38535Q/M;38534H;883B 28 CERAMIC, GLASS-SEALED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL TELEDYNE E2V (UK) LTD DIP CERAMIC, DIP-28 28 compliant EAR99 8542.32.00.61
对比
5962-8981703XA
e2v technologies 查询价格
Active 262.144 kbit 8 32KX8 5 V 5 V 35 ns UVPROM POWER SWITCHED PROM COMMON 1 32000 32.768 k ASYNCHRONOUS 3-STATE PARALLEL 13 V 40 mA 130 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Qualified e0 125 °C -55 °C MIL-STD-883 28 CERAMIC, GLASS-SEALED DIP DIP28,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.0205 mm 7.62 mm TELEDYNE E2V (UK) LTD DIP DIP, DIP28,.3 28 compliant EAR99 8542.32.00.61
对比
5962-8765001LA
e2v technologies 查询价格
Active 16.384 kbit 8 2KX8 5 V 5 V 50 ns UVPROM COMMON 1 2000 2.048 k ASYNCHRONOUS 3-STATE PARALLEL 13.5 V 120 mA 120 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T24 Qualified e0 125 °C -55 °C MIL-STD-883 24 CERAMIC, GLASS-SEALED DIP DIP24,.3 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL TELEDYNE E2V (UK) LTD DIP DIP, DIP24,.3 24 compliant EAR99 8542.32.00.61
对比
TMM27512AD-20
Toshiba America Electronic Components 查询价格
No No Active 524.288 kbit 8 64KX8 5 V 5 V 200 ns UVPROM COMMON 1 64000 65.536 k ASYNCHRONOUS 3-STATE PARALLEL 120 µA 5.25 V 4.75 V NMOS COMMERCIAL R-GDIP-T28 Not Qualified e0 70 °C 240 NOT SPECIFIED 28 CERAMIC, GLASS-SEALED WDIP DIP28,.6 RECTANGULAR IN-LINE, WINDOW NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL 5.2 mm 15.24 mm TOSHIBA CORP DIP WDIP, DIP28,.6 28 unknown EAR99 8542.32.00.61
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