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FIFO: 72,631 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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周期时间 (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (19)
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组织 (50)
电源 (19)
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标称供电电压 (Vsup) (9)
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Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证 生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup) 电源 最长访问时间 最大时钟频率 (fCLK) 周期时间 内存集成电路类型 其他特性 备用内存宽度 功能数量 字数代码 字数 工作模式 输出特性 可输出 并行/串行 最大待机电流 最大压摆率 最大供电电压 (Vsup) 最小供电电压 (Vsup) 技术 温度等级 JESD-30 代码 认证状态 JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别 处于峰值回流温度下的最长时间 端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装 端子面层 端子形式 端子节距 端子位置 座面最大高度 长度 宽度 IHS 制造商
零件包装代码
包装说明
针数
是否符合REACH标准
ECCN代码
HTS代码
交付时间
Samacsys Description
制造商包装代码
对比
SN74V293-7PZA
Texas Instruments 查询价格
Yes Yes Active 1.1796 Mbit 18 64KX18 3.3 V 3.3 V 5 ns 133 MHz 7.5 ns OTHER FIFO CAN ALSO BE CONFIGURED AS 131072 X 9 9 1 64000 65.536 k SYNCHRONOUS 3-STATE YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PQFP-G80 Not Qualified e4 4 70 °C 260 NOT SPECIFIED 80 PLASTIC/EPOXY LQFP QFP80,.64SQ SQUARE FLATPACK, LOW PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm QUAD 1.6 mm 14 mm 14 mm TEXAS INSTRUMENTS INC QFP LQFP, QFP80,.64SQ 80 compliant 3A991.B.2.B 8542.32.00.71 1 week SN74V293-7PZA, FIFO Memory Dual 128K x 9... more
对比
SN74V263PZAEP
Texas Instruments 查询价格
Yes Yes Active 147.456 kbit 18 8KX18 3.3 V 3.3 V 5 ns 133 MHz 7.5 ns OTHER FIFO CAN ALSO BE CONFIGURED AS 16384 X 9 9 1 8000 8.192 k SYNCHRONOUS 3-STATE YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS MILITARY S-PQFP-G80 Not Qualified e4 4 125 °C -55 °C 260 NOT SPECIFIED 80 PLASTIC/EPOXY LQFP QFP80,.64SQ SQUARE FLATPACK, LOW PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm QUAD 1.6 mm 14 mm 14 mm TEXAS INSTRUMENTS INC QFP LQFP, QFP80,.64SQ 80 compliant 3A991.B.2.B 8542.32.00.71 1 week SN74V263PZAEP, FIFO Memory Dual 16K x 9 ... more
对比
SN74V293PZAEP
Texas Instruments 查询价格
Yes Yes Active 1.1796 Mbit 18 64KX18 3.3 V 3.3 V 5 ns 133 MHz 7.5 ns OTHER FIFO CAN ALSO BE CONFIGURED AS 131072 X 9 9 1 64000 65.536 k SYNCHRONOUS 3-STATE YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS MILITARY S-PQFP-G80 Not Qualified e4 4 125 °C -55 °C 260 NOT SPECIFIED 80 PLASTIC/EPOXY LQFP QFP80,.64SQ SQUARE FLATPACK, LOW PROFILE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm QUAD 1.6 mm 14 mm 14 mm TEXAS INSTRUMENTS INC QFP LQFP, QFP80,.64SQ 80 compliant 3A991.B.2.B 8542.32.00.71 6 weeks Enhanced Product 65536 X 18 Synchronous Fifo Memory
对比
7202LA25JGI
Integrated Device Technology Inc 查询价格
Yes Yes Active 9.216 kbit 9 1KX9 5 V 5 V 25 ns 28.5 MHz 35 ns OTHER FIFO RETRANSMIT 1 1000 1.024 k ASYNCHRONOUS NO PARALLEL 5 mA 80 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PQCC-J32 Not Qualified e3 1 85 °C -40 °C 260 30 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm INTEGRATED DEVICE TECHNOLOGY INC QFJ QCCJ, LDCC32,.5X.6 32 compliant EAR99 8542.32.00.71
对比
74HC40105D,652
Nexperia 查询价格
Yes Active 64 bit 4 16X4 4.5 V 600 ns 71.428 ns REGISTER BASED; BUBBLE BACK 750NS 1 16 16 words ASYNCHRONOUS 3-STATE YES PARALLEL 6 V 2 V CMOS AUTOMOTIVE R-PDSO-G16 Not Qualified e4 1 125 °C -40 °C 260 30 16 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 9.9 mm 3.9 mm NEXPERIA SOP SOP, 16 compliant 8542.39.00.01 74HC40105 - 4-bit x 16-word FIFO register@en-us SOT109-1
对比
74HC40105D,653
Nexperia 查询价格
Yes Active 64 bit 4 16X4 4.5 V 600 ns 71.428 ns REGISTER BASED; BUBBLE BACK 750NS 1 16 16 words ASYNCHRONOUS 3-STATE YES PARALLEL 6 V 2 V CMOS AUTOMOTIVE R-PDSO-G16 Not Qualified e4 1 125 °C -40 °C 260 30 16 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 9.9 mm 3.9 mm NEXPERIA SOP SOP, 16 compliant 8542.39.00.01 74HC40105 - 4-bit x 16-word FIFO register@en-us SOT109-1
对比
CD40105BE
Texas Instruments 查询价格
Yes Active 64 bit 4 16X4 5 V 5/15 V 420 ns 1.5 MHz OTHER FIFO 1 16 16 words ASYNCHRONOUS 3-STATE YES PARALLEL 18 V 3 V CMOS MILITARY R-PDIP-T16 Not Qualified e4 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED 16 PLASTIC/EPOXY DIP DIP16,.3 RECTANGULAR IN-LINE NO Nickel/Palladium/Gold (Ni/Pd/Au) THROUGH-HOLE 2.54 mm DUAL 5.08 mm 19.305 mm 7.62 mm TEXAS INSTRUMENTS INC DIP DIP, DIP16,.3 16 compliant EAR99 8542.39.00.01 6 weeks CMOS 4-Bit-by-16-Word FIFO Register
对比
IDT7202LA20DB
Integrated Device Technology Inc 查询价格
No No Active 9.216 kbit 9 1KX9 5 V 5 V 20 ns 33.3 MHz 30 ns OTHER FIFO RETRANSMIT 1 1000 1.024 k ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 140 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 125 °C -55 °C 225 MIL-STD-883 Class B 20 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC DIP DIP, DIP28,.6 28 not_compliant EAR99 8542.32.00.71
对比
SN74V283PZAEP
Texas Instruments 查询价格
Yes Yes Active TEXAS INSTRUMENTS INC QFP LQFP, QFP80,.64SQ 80 compliant 3A991.B.2.B 8542.32.00.71 1 week
对比
IDT7201LA80DB
Integrated Device Technology Inc 查询价格
No No Active 4.608 kbit 9 512X9 5 V 5 V 80 ns 10 MHz 100 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 125 °C -55 °C 225 MIL-STD-883 Class B 20 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC DIP DIP, DIP28,.6 28 not_compliant EAR99 8542.32.00.71
对比
72255LA15PFG
Integrated Device Technology Inc 查询价格
Yes Yes Active 147.456 kbit 18 8KX18 5 V 5 V 10 ns 66.7 MHz 15 ns OTHER FIFO RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH 1 8000 8.192 k SYNCHRONOUS YES PARALLEL 20 mA 80 µA 5.5 V 4 V CMOS COMMERCIAL S-PQFP-G64 Not Qualified e3 3 70 °C 260 30 64 PLASTIC/EPOXY LQFP QFP64,.66SQ,32 SQUARE FLATPACK, LOW PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm QUAD 1.6 mm 14 mm 14 mm INTEGRATED DEVICE TECHNOLOGY INC QFP LQFP, QFP64,.66SQ,32 64 compliant EAR99 8542.32.00.71
对比
IDT72V36110L7-5BBGI
Integrated Device Technology Inc 查询价格
Yes Yes Active 4.7186 Mbit 36 128KX36 3.3 V 3.3 V 5 ns 133.3 MHz 7.5 ns OTHER FIFO RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE 1 128000 131.072 k SYNCHRONOUS YES PARALLEL 15 mA 40 µA 3.45 V 3.15 V CMOS INDUSTRIAL S-PBGA-B144 Not Qualified e1 3 85 °C -40 °C 260 30 144 PLASTIC/EPOXY BGA BGA144,12X12,40 SQUARE GRID ARRAY YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.97 mm 13 mm 13 mm INTEGRATED DEVICE TECHNOLOGY INC BGA BGA, BGA144,12X12,40 144 compliant EAR99 8542.32.00.71
对比
72V251L15PFGI
Integrated Device Technology Inc 查询价格
Yes Yes Active 73.728 kbit 9 8KX9 3.3 V 3.3 V 10 ns 66.7 MHz 15 ns OTHER FIFO 1 8000 8.192 k SYNCHRONOUS YES PARALLEL 5 mA 20 µA 3.6 V 3 V CMOS INDUSTRIAL S-PQFP-G32 Not Qualified e3 3 85 °C -40 °C 260 30 32 PLASTIC/EPOXY LQFP QFP32,.35SQ,32 SQUARE FLATPACK, LOW PROFILE YES Matte Tin (Sn) - annealed GULL WING 800 µm QUAD 1.6 mm 7 mm 7 mm INTEGRATED DEVICE TECHNOLOGY INC TQFP LQFP, QFP32,.35SQ,32 32 compliant EAR99 8542.32.00.71 TQFP 7MM X 7MM X 1.4MM PRG32
对比
7204L12SOG
Integrated Device Technology Inc 查询价格
Yes Yes Active e3 3 Matte Tin (Sn) INTEGRATED DEVICE TECHNOLOGY INC SOIC , 28 compliant SOIC 330 MIL PEG28
对比
72V2113L6PFG
Integrated Device Technology Inc 查询价格
Yes Yes Active 4.7186 Mbit 18 256KX18 3.3 V 3.3 V 4 ns 166 MHz 6 ns OTHER FIFO ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE 9 1 256000 262.144 k SYNCHRONOUS YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PQFP-G80 Not Qualified e3 3 70 °C 260 30 80 PLASTIC/EPOXY LQFP QFP80,.64SQ SQUARE FLATPACK, LOW PROFILE YES Matte Tin (Sn) - annealed GULL WING 650 µm QUAD 1.6 mm 14 mm 14 mm INTEGRATED DEVICE TECHNOLOGY INC TQFP LQFP, QFP80,.64SQ 80 compliant EAR99 8542.32.00.71 PNG80
对比
72V2113L7-5BC
Integrated Device Technology Inc 查询价格
No No Active 4.7186 Mbit 18 256KX18 3.3 V 3.3 V 5 ns 133.3 MHz 7.5 ns OTHER FIFO ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE 9 1 256000 262.144 k SYNCHRONOUS YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PBGA-B100 Not Qualified e0 3 70 °C 225 20 100 PLASTIC/EPOXY LBGA BGA100,10X10,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Lead (Sn63Pb37) BALL 1 mm BOTTOM 1.5 mm 11 mm 11 mm INTEGRATED DEVICE TECHNOLOGY INC CABGA LBGA, BGA100,10X10,40 100 not_compliant EAR99 8542.32.00.71 BC100
对比
72V36110L6BB
Integrated Device Technology Inc 查询价格
No No Active 4.7186 Mbit 36 128KX36 3.3 V 3.3 V 4 ns 166 MHz 6 ns OTHER FIFO RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE 1 128000 131.072 k SYNCHRONOUS YES PARALLEL 15 mA 40 µA 3.45 V 3.15 V CMOS COMMERCIAL S-PBGA-B144 Not Qualified e0 3 70 °C 225 20 144 PLASTIC/EPOXY BGA BGA144,12X12,40 SQUARE GRID ARRAY YES Tin/Lead (Sn63Pb37) BALL 1 mm BOTTOM 1.97 mm 13 mm 13 mm INTEGRATED DEVICE TECHNOLOGY INC PBGA BGA, BGA144,12X12,40 144 not_compliant EAR99 8542.32.00.71 PBGA 13.0 X 13.0 MM X 1.0 MM PITCH BB144
对比
7201LA50DB
Integrated Device Technology Inc 查询价格
No No Active 4.608 kbit 9 512X9 5 V 5 V 50 ns 15 MHz 65 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 Class B NOT SPECIFIED 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn63Pb37) THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP 0.600 INCH, CERAMIC, DIP-28 28 not_compliant EAR99 8542.32.00.71 CERDIP 600 MIL CD28
对比
72V2113L7-5BCI
Integrated Device Technology Inc 查询价格
No No Active 4.7186 Mbit 18 256KX18 3.3 V 3.3 V 5 ns 133.3 MHz 7.5 ns OTHER FIFO ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE 9 1 256000 262.144 k SYNCHRONOUS YES PARALLEL 15 mA 35 µA 3.45 V 3.15 V CMOS INDUSTRIAL S-PBGA-B100 Not Qualified e0 3 85 °C -40 °C 225 20 100 PLASTIC/EPOXY LBGA BGA100,10X10,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Lead (Sn63Pb37) BALL 1 mm BOTTOM 1.5 mm 11 mm 11 mm INTEGRATED DEVICE TECHNOLOGY INC CABGA LBGA, BGA100,10X10,40 100 not_compliant EAR99 8542.32.00.71 CHIP ARRAY BGA 11.0 X 11.0 MM X 1.0 MM BC100
对比
7204L30DB
Integrated Device Technology Inc 查询价格
No No Active 36.864 kbit 9 4KX9 5 V 5 V 30 ns 25 MHz 40 ns OTHER FIFO RETRANSMIT 1 4000 4.096 k ASYNCHRONOUS NO PARALLEL 4 mA 150 µA 5.5 V 4.5 V CMOS MILITARY R-CDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 Class B NOT SPECIFIED 28 CERAMIC, METAL-SEALED COFIRED DIP DIP28,.6 RECTANGULAR IN-LINE NO Tin/Lead (Sn63Pb37) THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.1475 mm 7.62 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP DIP, DIP28,.6 28 not_compliant EAR99 8542.32.00.71 CERDIP 600 MIL CD28
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