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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 数据保留时间-最小值 | 混合内存类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 并行/串行 | 串行总线类型 | 最大待机电流 | 最小待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | 最长写入周期时间 (tWC) | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 包装说明 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | Date Of Intro | YTEOL | 零件包装代码 | 针数 | 制造商包装代码 | |
对比 | 47C16-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 47C16-I/SN | 2188 | 2024-04-15 18:04:45 | SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | ||||||||||||||||
对比 | MR2A16ACYS35 | Everspin Technologies | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 40 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 1623927 | 2024-03-02 20:13:37 | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 | compliant | EAR99 | 8542.32.00.71 | TSOP2 | 44 | ||||||||||||||||||||
对比 | MR2A16AYS35 | Everspin Technologies | 查询价格 | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | 3 | 70 °C | 260 | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 1623927 | 2024-03-02 19:02:27 | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 | compliant | EAR99 | 8542.32.00.71 | TSOP2 | 44 | ||||||||||||||||||||||
对比 | 47L04-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 4.096 kbit | 8 | 512X8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 47L04-I/SN | 2188 | 2024-04-15 18:04:45 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | ||||||||||||||||||
对比 | MR0A08BYS35 | Everspin Technologies | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 7 mA | 65 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 1623927 | 2024-03-02 18:38:57 | TSOP2, TSOP44,.46,32 | compliant | EAR99 | 8542.32.00.71 | TSOP2 | 44 | |||||||||||||||||||||
对比 | 47C04-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 47C04-I/SN | 2188 | 2024-04-15 18:04:39 | SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | ||||||||||||||||
对比 | 47L04-I/ST | Microchip Technology Inc | 查询价格 | Yes | Active | 4.096 kbit | 8 | 512X8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | 47L04-I/ST | 2188 | 2024-04-15 18:04:45 | TSSOP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | |||||||||||||||||
对比 | MR25H40CDF | Everspin Technologies | 查询价格 | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 40 MHz | MRAM | 1 | 512000 | 524.288 k | SYNCHRONOUS | SERIAL | SPI | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-N8 | Not Qualified | 3 | 85 °C | -40 °C | 260 | NOT SPECIFIED | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 1.27 mm | DUAL | 900 µm | 6 mm | 5 mm | 1623927 | 2024-04-02 17:12:39 | DFN-8 | compliant | EAR99 | SON | 8 | |||||||||||||||||||||
对比 | MR4A16BMA35 | Everspin Technologies | 查询价格 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 35 ns | MRAM | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 9 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | 35 ns | S-PBGA-B48 | Not Qualified | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 10 mm | 10 mm | 1623927 | 2024-03-02 19:42:46 | LFBGA, BGA48,6X8,30 | compliant | Mainland China, Taiwan | EAR99 | 8.5 | BGA | 48 | |||||||||||||||||
对比 | 47L16-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 16.384 kbit | 8 | 2KX8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 47L16-I/SN | 2188 | 2024-04-15 18:59:43 | SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | |||||||||||||||||
对比 | MR4A16BCMA35 | Everspin Technologies | 查询价格 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 35 ns | MRAM | 20 | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | PARALLEL | 9 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | 35 ns | S-PBGA-B48 | Not Qualified | 5 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 10 mm | 10 mm | 1623927 | 2024-03-02 19:54:12 | FBGA-48 | compliant | Mainland China, Taiwan | EAR99 | 8.5 | BGA | 48 | |||||||||||||||
对比 | MR25H10CDF | Everspin Technologies | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 3 V | MEMORY CIRCUIT | 1 | 128000 | 131.072 k | SYNCHRONOUS | 115 µA | 27 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-N8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 900 µm | 6 mm | 5 mm | 1623927 | 2024-03-02 19:00:19 | DFN-8 | compliant | EAR99 | 8542.32.00.71 | SON | 8 | |||||||||||||||||||
对比 | USBF129T-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | MEMORY CIRCUIT | 1 | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | USBF129T-I/SN | 2188 | 2024-04-15 18:30:54 | SOIC-8 | compliant | EAR99 | 8542.31.00.01 | [object Object] | 2016-03-10 | |||||||||||||||||||||||
对比 | MR256A08BCMA35 | Everspin Technologies | 查询价格 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 7 mA | 65 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B48 | Not Qualified | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | 2024-03-02 18:58:19 | LFBGA, BGA48,6X8,30 | compliant | EAR99 | 8542.32.00.71 | BGA | 48 | ||||||||||||||||||||
对比 | MR2A16ACMA35 | Everspin Technologies | 查询价格 | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 28 mA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B48 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | 2024-03-02 20:42:18 | LFBGA, BGA48,6X8,30 | compliant | EAR99 | 8542.32.00.71 | BGA | 48 | |||||||||||||||||||||
对比 | DS2401+ | Analog Devices Inc | 查询价格 | Yes | Active | 64 bit | 1 | 64X1 | 5 V | MEMORY CIRCUIT | 1 | 64 | 64 words | ASYNCHRONOUS | 6 V | 2.8 V | CMOS | INDUSTRIAL | O-PBCY-T3 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 250 | 30 | 3 | PLASTIC/EPOXY | TO-92 | ROUND | CYLINDRICAL | NO | Matte Tin (Sn) | THROUGH-HOLE | BOTTOM | DS2401+ | 1742 | 2024-04-02 16:03:20 | TO-92, 3 PIN | compliant | Japan, Mainland China, Malaysia, Philipp... more | 2002-02-22 | 8.5 | 3-TO92-N/A | 3 | 3-TO92-N/A | |||||||||||||||||||||||
对比 | 47L16-I/P | Microchip Technology Inc | 查询价格 | Yes | Active | 16.384 kbit | 8 | 2KX8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 47L16-I/P | 2188 | 2024-04-15 18:04:45 | DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 | ||||||||||||||||||||
对比 | MR2A08ACMA35 | Everspin Technologies | 查询价格 | Yes | Active | 2.0972 Mbit | 8 | 256KX8 | 3.3 V | 35 ns | MEMORY CIRCUIT | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 20 mA | 135 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B48 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | LFBGA | BGA48,6X8,30 | SQUARE | GRID ARRAY, LOW PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.35 mm | 8 mm | 8 mm | 1623927 | 2024-03-02 18:43:35 | 8 X 8 MM, ROHS COMPLIANT, FBGA-48 | compliant | EAR99 | 8542.32.00.71 | BGA | 48 | |||||||||||||||||||||
对比 | DS2401P+T&R | Analog Devices Inc | 查询价格 | Yes | Active | 64 bit | 1 | 64X1 | 5 V | MEMORY CIRCUIT | 1 | 64 | 64 words | ASYNCHRONOUS | 6 V | 2.8 V | CMOS | INDUSTRIAL | R-PDSO-C6 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 6 | PLASTIC/EPOXY | SOC | SOC6,.17 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | C BEND | 1.27 mm | DUAL | 1.5 mm | 3.94 mm | 3.76 mm | DS2401P+T&R | 1742 | 2024-04-02 16:02:42 | Japan, Mainland China, Malaysia, Philipp... more | 2002-02-22 | 8.5 | 6-PLCC-N/A | 6 | 6-PLCC-N/A | ||||||||||||||||||||
对比 | 47L04-I/P | Microchip Technology Inc | 查询价格 | Yes | Active | 4.096 kbit | 8 | 512X8 | 400 ns | MEMORY CIRCUIT | EEPROM+SRAM | 1 | 1 | 512 | 512 words | SYNCHRONOUS | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDIP-T8 | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | 47L04-I/P | 2188 | 2024-04-15 18:04:45 | DIP-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 2016-10-10 | 24.61 |