Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 | 最大待机电流 | 最小待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | Source Content uid | 制造商包装代码 | |
对比 | IS61LV5128AL-10TLI | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3.14 V | 95 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | 2024-04-15 18:01:56 | TSOP2 | LEAD FREE, PLASTIC, TSOP2-44 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | |||||||||
对比 | AS7C34098A-10TCN | Alliance Memory Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 8 mA | 3 V | 170 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 70 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | 2024-04-15 17:59:36 | TSOP2 | LEAD FREE, TSOP2-44 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | ||||||||||||
对比 | AS7C34098A-10TIN | Alliance Memory Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 8 mA | 3 V | 180 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3/e6 | 3 | 85 °C | -40 °C | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 1689 | 2024-04-15 17:59:36 | TSOP2 | 44 | compliant | Mainland China | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | |||||||||||||
对比 | IS61C256AL-12JLI | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | End Of Life | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 2 V | 25 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | SOJ28,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.56 mm | 18.415 mm | 7.62 mm | 2070 | 2024-04-15 18:02:01 | SOJ | SOJ, SOJ28,.34 | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 0.29 | |||||||||
对比 | IS61C256AL-12JLI-TR | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | End Of Life | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOJ | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | J BEND | 1.27 mm | DUAL | 3.56 mm | 18.415 mm | 7.62 mm | 2070 | 2024-04-15 18:02:01 | SOJ | SOJ, | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 0.29 | |||||||||||||||
对比 | IS61LV25616AL-10TLI-TR | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2 V | 100 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | 2024-04-15 18:01:56 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | |||||||||
对比 | IS61LV25616AL-10TL | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 2 V | 100 µA | 3.63 V | 3.135 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | 2024-04-15 18:56:03 | TSOP2 | LEAD FREE, PLASTIC, TSOP2-44 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | ||||||||||
对比 | IS61LV25616AL-10TLI | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 2 V | 110 µA | 3.63 V | 3.135 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | 2024-04-15 18:01:56 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | |||||||||
对比 | GS8322Z18AGD-150IV | GSI Technology | 查询价格 | Yes | Active | 37.7487 Mbit | 18 | 2MX18 | 1.8 V | 7.5 ns | 150 MHz | ZBT SRAM | ALSO OPERATED WITH 2.5V SUPPLY; PIPELINE/FLOW THROUGH ARCHITECTURE | COMMON | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 1.7 V | 150 µA | 2 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | BALL | 1 mm | BOTTOM | 1.4 mm | 15 mm | 13 mm | 2017 | 2024-04-15 18:00:07 | BGA | LBGA, BGA165,11X15,40 | 165 | compliant | Taiwan | 3A991.B.2.B | 8542.32.00.41 | [object Object] | 7 | |||||||||||
对比 | IS61LV12816L-10TL | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 mA | 2 V | 60 µA | 3.63 V | 2.97 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 70 °C | 260 | 10 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.415 mm | 10.16 mm | 2070 | 2024-04-15 18:01:56 | TSOP2 | TSOP2, TSOP44,.46,32 | 44 | compliant | Mainland China, Taiwan | 3A991.B.2.A | 8542.32.00.41 | [object Object] | 4.9 | |||||||||||
对比 | IS61C256AL-12TLI | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 12 ns | STANDARD SRAM | COMMON | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 100 µA | 2 V | 25 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G28 | Not Qualified | e3 | 85 °C | -40 °C | 260 | 10 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | 2070 | 2024-04-15 18:02:01 | TSOP | TSOP1, TSSOP28,.53,22 | 28 | compliant | Mainland China, Taiwan | EAR99 | 8542.32.00.41 | [object Object] | 4 | ||||||||||
对比 | M48Z02-150PC1 | STMicroelectronics | 查询价格 | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | STANDARD SRAM | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 3 mA | 4.75 V | 80 µA | 5.5 V | 4.75 V | CMOS | COMMERCIAL | R-PDIP-T24 | Not Qualified | e3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 9.65 mm | 34.545 mm | 15.24 mm | 2443 | 2024-04-15 18:29:10 | DIP | DIP-24 | 24 | compliant | Malaysia | EAR99 | 8542.32.00.41 | [object Object] | 4 | M48Z02-150PC1 | ||||||||||
对比 | 71V416S15PHGI8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3 V | 170 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 2354 | 2024-04-15 17:53:02 | TSOP | 44 | compliant | NLR | 8542320041 | [object Object] | 4 | 71V416S15PHGI8 | PHG44 | |||||||||
对比 | 71024S15TYGI8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 15 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 7.62 mm | 2354 | 2024-04-15 17:53:18 | SOJ | 32 | compliant | NLR | 8542320041 | [object Object] | 4 | 71024S15TYGI8 | PJG32 | |||||||
对比 | N25S830HAS22I | onsemi | 查询价格 | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1, (3 LINE) | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | 2260 | 2024-04-02 19:58:59 | SOIC-8 Narrow Body | 0.150 INCH, GREEN, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.41 | [object Object] | 4 | N25S830HAS22I | 751AZ | |||||||
对比 | 23LC1024T-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 20 MHz | STANDARD SRAM | COMMON/SEPARATE | 1 | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 2024-04-15 18:57:33 | SOIC-8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 24.61 | 23LC1024T-I/SN | ||||||||
对比 | CY62128ELL-45ZXI | Infineon Technologies AG | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 45 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 µA | 2 V | 16 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 20 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | 2065 | 2024-04-02 20:40:41 | 8 X 20 MM, LEAD FREE, TSOP1-32 | compliant | Philippines, Taiwan | 4 | |||||||||||||||
对比 | 23K256T-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 2024-04-15 17:55:53 | SOIC | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 24.61 | 23K256T-I/SN | ||||||
对比 | 23K256-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 2188 | 2024-04-15 17:55:53 | SOIC | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | [object Object] | 24.61 | 23K256-I/SN | |||||||
对比 | IS63LV1024L-12JL | Integrated Silicon Solution Inc | 查询价格 | Yes | Yes | End Of Life | 1.0486 Mbit | 8 | 128KX8 | 3.3 V | 12 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 mA | 2 V | 90 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-J32 | Not Qualified | e3 | 70 °C | 260 | 10 | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.56 mm | 20.955 mm | 7.62 mm | 2070 | 2024-04-15 18:01:56 | SOJ | SOJ, SOJ32,.34 | 32 | compliant | Mainland China, Taiwan | 3A991.B.2.B | 8542.32.00.41 | 0.29 |