Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 | 最大待机电流 | 最小待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 包装说明 | 是否符合REACH标准 | ECCN代码 | HTS代码 | YTEOL | 零件包装代码 | 针数 | Country Of Origin | 交付时间 | |
对比 | 71V432S7PF | Integrated Device Technology Inc | 查询价格 | No | Obsolete | 1.0486 Mbit | 32 | 32KX32 | 3.3 V | 7 ns | 66 MHz | CACHE SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 3.14 V | 160 µA | 3.63 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | TIN LEAD | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 71V432S7PF | 2068 | 2023-08-02 00:17:02 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | 0 | ||||||||||
对比 | K6R4016C1C-TE15T | Samsung Semiconductor | 查询价格 | No | No | Obsolete | 4.1943 Mbit | 16 | 256KX16 | 5 V | 15 ns | STANDARD SRAM | COMMON | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 10 mA | 4.5 V | 180 µA | CMOS | OTHER | R-PDSO-G44 | Not Qualified | 3 | 85 °C | -25 °C | 240 | 44 | PLASTIC/EPOXY | TSOP | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 2372 | 2023-08-01 19:40:27 | TSOP, TSOP44,.46,32 | unknown | 3A991.B.2.A | 8542.32.00.41 | 0 | ||||||||||||||||||||
对比 | M5M5V408BWG-10H | Mitsubishi Electric | 查询价格 | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 3 V | 100 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 2 V | 40 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | R-PBGA-B36 | Not Qualified | e0 | 70 °C | 36 | PLASTIC/EPOXY | BGA | BGA36,6X6,30 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 2141105 | 2023-08-01 18:38:05 | BGA, BGA36,6X6,30 | unknown | 3A991.B.2.A | 8542.32.00.41 | 0 | BGA | 36 | ||||||||||||||||||
对比 | L6116WC15 | LOGIC Devices Inc | 查询价格 | No | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 15 ns | STANDARD SRAM | AUTOMATIC POWER-DOWN | COMMON | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 150 µA | 2 V | 160 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDSO-J24 | Not Qualified | e0 | 3 | 70 °C | 225 | 24 | PLASTIC/EPOXY | SOJ | SOJ24,.34 | RECTANGULAR | SMALL OUTLINE | YES | TIN LEAD | J BEND | 1.27 mm | DUAL | 3.7592 mm | 15.5575 mm | 7.62 mm | 4317306 | 2023-08-02 09:35:14 | SOJ, SOJ24,.34 | unknown | EAR99 | 8542.32.00.41 | 0 | SOJ | 24 | |||||||||
对比 | GS81302DT37GE-350 | GSI Technology | 查询价格 | Yes | Yes | Not Recommended | 150.9949 Mbit | 36 | 4MX36 | 1.8 V | 450 ps | QDR II PLUS SRAM | PIPELINED ARCHITECTURE | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | PARALLEL | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 165 | PLASTIC/EPOXY | LBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | TIN SILVER COPPER | BALL | 1 mm | BOTTOM | 1.5 mm | 17 mm | 15 mm | 2017 | 2024-04-20 08:21:32 | LBGA, | compliant | 3A991.B.2.B | 8542.32.00.41 | 3 | BGA | 165 | Taiwan | [object Object] | ||||||||||||||
对比 | D2114A-4 | Intel Corporation | 查询价格 | No | Obsolete | 4.096 kbit | 4 | 1KX4 | 5 V | 200 ns | STANDARD SRAM | COMMON | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | MOS | COMMERCIAL | R-XDIP-T18 | Not Qualified | e0 | 70 °C | 18 | CERAMIC | DIP | DIP18,.3 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 2071 | 2023-08-02 02:09:03 | DIP, DIP18,.3 | unknown | EAR99 | 8542.32.00.41 | 0 | |||||||||||||||||||||||||
对比 | 7027L15G | Integrated Device Technology Inc | 查询价格 | No | No | Transferred | 524.288 kbit | 16 | 32KX16 | 5 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 mA | 4.5 V | 325 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-CPGA-P108 | Not Qualified | e0 | 70 °C | 108 | CERAMIC, METAL-SEALED COFIRED | PGA | PGA108,12X12 | SQUARE | GRID ARRAY | NO | TIN LEAD | PIN/PEG | 2.54 mm | PERPENDICULAR | 7027L15G | 2068 | 2023-08-01 20:30:47 | PGA, PGA108,12X12 | not_compliant | 3A991.B.2.B | 8542.32.00.41 | PGA | 108 | |||||||||||||||
对比 | CY7C1363C-133BGI | Cypress Semiconductor | 查询价格 | No | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 6.5 ns | 133 MHz | CACHE SRAM | FLOW THROUGH ARCHITECTURE | COMMON | 1 | 512000 | 524.288 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.6 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B119 | Not Qualified | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 119 | PLASTIC/EPOXY | BGA | BGA119,7X17,50 | RECTANGULAR | GRID ARRAY | YES | Tin/Lead (Sn/Pb) | BALL | 1.27 mm | BOTTOM | 2.4 mm | 22 mm | 14 mm | 1903 | 2024-04-02 18:25:03 | 22 X 14 MM, 2.40 MM HEIGHT, BGA-119 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | 0 | BGA | 119 | ||||||||
对比 | IDT71322L70JBG | Integrated Device Technology Inc | 查询价格 | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 70 ns | MULTI-PORT SRAM | BATTERY BACKUP OPERATION | 1 | 2000 | 2.048 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 125 °C | -55 °C | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | IDT71322L70JBG | 2068 | 2022-08-02 17:47:18 | PLASTIC, LCC-52 | compliant | 3A001.A.2.C | 8542.32.00.41 | 0 | LCC | 52 | ||||||||||||||||
对比 | GS88018GT-100IT | GSI Technology | 查询价格 | Yes | Yes | Obsolete | 9.4372 Mbit | 18 | 512KX18 | 3.3 V | 12 ns | CACHE SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 3.6 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | 3 | 85 °C | -40 °C | 260 | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | PURE MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | 2022-08-02 13:26:10 | LQFP, | compliant | 3A991.B.2.A | 8542.32.00.41 | 0 | QFP | 100 | ||||||||||||||||
对比 | CY7C1380DV25-167BGXCT | Cypress Semiconductor | 查询价格 | Obsolete | 18.8744 Mbit | 36 | 512KX36 | 2.5 V | 3.4 ns | CACHE SRAM | PIPELINED ARCHITECTURE | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 2.625 V | 2.375 V | CMOS | COMMERCIAL | R-PBGA-B119 | Not Qualified | e1 | 70 °C | 119 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | 1.27 mm | BOTTOM | 2.4 mm | 22 mm | 14 mm | 1903 | 2023-08-02 03:23:38 | 14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, BGA-119 | unknown | 3A991.B.2.A | 8542.32.00.41 | 0 | BGA | 119 | ||||||||||||||||||||
对比 | SMD1-65608V-45LH:RD | Atmel Corporation | 查询价格 | Obsolete | STANDARD SRAM | Not Qualified | 1773 | 2022-06-01 20:40:08 | , | unknown | EAR99 | 8542.32.00.41 | 0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
对比 | SL4K-67132L-45MH | Atmel Corporation | 查询价格 | Obsolete | MULTI-PORT SRAM | Not Qualified | 1773 | 2022-06-01 20:34:13 | , | unknown | EAR99 | 8542.32.00.41 | 0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
对比 | HM4-65262/883:RD | Atmel Corporation | 查询价格 | Obsolete | STANDARD SRAM | Not Qualified | 1773 | 2023-04-01 20:55:18 | , | unknown | EAR99 | 8542.32.00.41 | 0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
对比 | P4C1256L-55P6C | Pyramid Semiconductor Corporation | 查询价格 | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 55 ns | STANDARD SRAM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T28 | Not Qualified | e0 | 70 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn85Pb15) | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 36.322 mm | 15.24 mm | 4307511 | 2024-04-02 17:55:04 | 0.600 INCH, PLASTIC, DIP-28 | compliant | EAR99 | 8542.32.00.41 | 4 | DIP | 28 | Taiwan, USA | |||||||||||||||||||
对比 | GS816032DGT-250IT | GSI Technology | 查询价格 | Active | 16.7772 Mbit | 32 | 512KX32 | 2.5 V | 5.5 ns | CACHE SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 3.3V | 1 | 512000 | 524.288 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PQFP-G100 | 85 °C | -40 °C | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | 2024-04-02 17:56:28 | LQFP, | compliant | 3A991.B.2.A | 8542.32.00.41 | 5.75 | QFP | 100 | Taiwan | |||||||||||||||||||||
对比 | GS8641Z36E-200 | GSI Technology | 查询价格 | No | No | Obsolete | 75.4975 Mbit | 36 | 2MX36 | 2.5 V | 7.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | 3 | 70 °C | 235 | 165 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | BALL | 1 mm | BOTTOM | 17 mm | 15 mm | 2017 | 2022-08-02 16:37:50 | BGA, | compliant | 3A991.B.2.A | 8542.32.00.41 | 0 | BGA | 165 | |||||||||||||||||||
对比 | IDT7198L35D | Integrated Device Technology Inc | 查询价格 | No | No | Obsolete | 65.536 kbit | 4 | 16KX4 | 5 V | 35 ns | STANDARD SRAM | COMMON | 1 | 1 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 150 µA | 2 V | 105 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-GDIP-T24 | Not Qualified | e0 | 70 °C | 24 | CERAMIC, GLASS-SEALED | DIP | DIP24,.3 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 5.08 mm | 32.004 mm | 7.62 mm | IDT7198L35D | 2068 | 2023-08-02 12:39:05 | 0.300 INCH, CERDIP-24 | not_compliant | EAR99 | 8542.32.00.41 | 0 | DIP | 24 | ||||||||||
对比 | IDT7007L45G | Integrated Device Technology Inc | 查询价格 | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 45 ns | MULTI-PORT SRAM | INTERRUPT FLAG; ARBITER; SEMAPHORE | COMMON | 1 | 2 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 6 mA | 4.5 V | 350 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-CPGA-P68 | Not Qualified | e0 | 70 °C | 68 | CERAMIC, METAL-SEALED COFIRED | PGA | PGA68,11X11 | SQUARE | GRID ARRAY | NO | TIN LEAD | PIN/PEG | 2.54 mm | PERPENDICULAR | 5.207 mm | 29.464 mm | 29.464 mm | IDT7007L45G | 2068 | 2023-08-02 14:03:02 | CAVITY-UP, PGA-68 | not_compliant | EAR99 | 8542.32.00.41 | 0 | PGA | 68 | |||||||||
对比 | HM0-65789E-5 | Matra MHS | 查询价格 | Obsolete | 65.536 kbit | 4 | 16KX4 | 5 V | 15 ns | STANDARD SRAM | 1 | 1 | 16000 | 16.384 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5.5 V | 4.5 V | CMOS | COMMERCIAL | X-XUUC-N24 | Not Qualified | 70 °C | 24 | UNSPECIFIED | DIE | UNSPECIFIED | UNCASED CHIP | YES | NO LEAD | UPPER | 116152012 | 2023-04-01 21:18:37 | DIE, | unknown | EAR99 | 8542.32.00.41 | 0 |