Sat Aug 16 2025 12:49:10 GMT+0800 (China Standard Time)

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    请输入至少 3 个字母或数字的器件型号,或至少 2 个汉字的厂商名称
    功率场效应晶体管: 187,970 个筛选结果
    所有筛选条件
    • 所有筛选条件
    • 其他特性
    • 模拟集成电路 - 其他类型
    • 雪崩能效等级(Eas)
    • 外壳连接
    • 最大集电极电流 (IC)
    • 基于收集器的最大容量
    • 集电极-发射极最大电压
    • 配置
    • 最小直流电流增益 (hFE)
    • 最小漏源击穿电压
    • 最大漏极电流 (Abs) (ID)
    • 最大漏极电流 (ID)
    • 最大漏源导通电阻
    • FET 技术
    • 最大降落时间(tf)
    • 最大反馈电容 (Crss)
    • 门极发射器阈值电压最大值
    • 门极-发射极最大电压
    • 最高频带
    • JEDEC-95代码
    • JESD-30 代码
    • JESD-609代码
    • 制造商
    • 湿度敏感等级
    • 元件数量
    • 端子数量
    • 工作模式
    • 最高工作温度
    • 最低工作温度
    • 封装主体材料
    • 封装形状
    • 封装形式
    • 生命周期
    • 是否无铅
    • 峰值回流温度(摄氏度)
    • 极性/信道类型
    • 功耗环境最大值
    • 最大功率耗散 (Abs)
    • 最小功率增益 (Gp)
    • 最大脉冲漏极电流 (IDM)
    • 认证状态
    203 000207651 5102 2553 000
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    0.11200.1306090120
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    3010530496886105
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    501 200503386259131 200
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    配置 (50)
    2.257502.25189376563750
    -
    最小漏源击穿电压 (50)
    81 70084318541 2771 700
    -
    0.031200.03306090120
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    最大漏极电流 (ID) (50)
    11201316190120
    -
    最大漏源导通电阻 (50)
    0.00730.0071.5 0353
    -
    24002102201301400
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    66.566.136.256.5
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    制造商 (50)
    元件数量 (9)
    111146911
    -
    端子数量 (45)
    -55300-5534123211300
    -
    -6540-65-39-121440
    -
    极性/信道类型 (5)
    1.15001.1126251375500
    -
    15001126251375500
    -
    10141011121314
    -
    44004103202301400
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    Most Relevant Technical Compliance Operating Conditions Physical Other
    对比 制造商型号 制造商 Composite Price
    风险等级 是否无铅 是否Rohs认证
    生命周期 极性/信道类型 表面贴装
    配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
    晶体管元件材料
    JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
    外壳连接 封装主体材料 封装形状 封装形式 端子面层
    端子形式
    端子位置
    mfrid
    Modified On
    零件包装代码
    针数
    Reach Compliance Code
    ECCN代码
    Factory Lead Time
    YTEOL
    Source Content uid
    Country Of Origin
    包装说明
    对比
    IRF540PBF
    查询价格
    Yes Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 28 A 77 mΩ AVALANCHE RATED 230 mJ 120 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 110 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 1 175 °C -55 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE 2516 2025-08-13 17:52:28 TO-220AB 3 Not Compliant EAR99 40 weeks
    对比
    IRFR9024NTRPBF
    查询价格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 11 A 175 mΩ AVALANCHE RATED, HIGH RELIABILITY 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 38 W 44 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 2025-08-13 00:35:10 Not Compliant EAR99 IRFR9024NTRPBF
    对比
    IRF9Z24SPBF
    查询价格
    Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 280 mΩ AVALANCHE RATED, HIGH RELIABILITY 240 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 60 W 44 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-13 03:13:21 3 Compliant EAR99 8 weeks LEAD FREE, D2PAK-3
    对比
    IRFBF20SPBF
    查询价格
    Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 900 V 1 1.7 A 8 Ω AVALANCHE RATED 180 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 54 W 6.8 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-13 19:47:30 3 Compliant EAR99 8 weeks LEAD FREE, D2PAK-3
    对比
    IRF640SPBF
    查询价格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 18 A 180 mΩ AVALANCHE RATED 580 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 130 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 175 °C -55 °C 260 40 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-13 07:26:58 Not Compliant EAR99 12 weeks LEAD FREE, PLASTIC, D2PAK-3
    对比
    IRF9540SPBF
    查询价格
    Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 19 A 200 mΩ AVALANCHE RATED 640 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2025-08-13 23:13:02 3 Not Compliant EAR99 8 weeks
    对比
    TPH1400ANH,L1Q(M
    查询价格
    Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 100 V 1 42 A 13.6 mΩ 46 mJ 50 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 48 W 91 A SWITCHING SILICON S-PDSO-F8 150 °C DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE FLAT DUAL 2484 2025-08-13 13:06:34 Unknown EAR99 TPH1400ANH,L1Q(M SOP-8
    对比
    IRF740SPBF
    查询价格
    Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 400 V 1 10 A 550 mΩ AVALANCHE RATED 520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 40 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2025-08-13 19:19:31 D2PAK 4 Not Compliant EAR99 8 weeks
    对比
    IRF520NPBF
    查询价格
    Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 9.7 A 200 mΩ AVALANCHE RATED, HIGH RELIABILITY 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 47 W 38 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE 2065 2025-08-14 11:58:55 Not Compliant EAR99 18 weeks IRF520NPBF
    对比
    IRF9530SPBF
    查询价格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 12 A 300 mΩ AVALANCHE RATED 400 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 88 W 48 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-13 11:05:32 Not Compliant EAR99 12 weeks
    对比
    IRF5210STRLPBF
    查询价格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 38 A 60 mΩ HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE 120 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 170 W 140 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 2025-08-13 02:38:03 Not Compliant EAR99 IRF5210STRLPBF
    对比
    IRLR3114ZTRPBF
    查询价格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 40 V 1 42 A 6.5 mΩ AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE 260 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 140 W 500 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 2025-08-14 08:29:29 Not Compliant EAR99 IRLR3114ZTRPBF LEAD FREE, PLASTIC, DPAK-3
    对比
    IRF9530STRLPBF
    查询价格
    Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 12 A 300 mΩ AVALANCHE RATED 400 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 88 W 48 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2025-08-05 22:27:46 Compliant EAR99 12 weeks
    对比
    IRFR9220TRPBF
    查询价格
    Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.6 A 1.5 Ω AVALANCHE RATED 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 14 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-07-05 00:29:02 TO-252AA 3 Not Compliant EAR99 8 weeks
    对比
    IRFR4105TRPBF
    查询价格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 20 A 45 mΩ 65 mJ 100 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 68 W 100 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 2025-08-13 14:07:39 Not Compliant EAR99 18 weeks IRFR4105TRPBF
    对比
    IRFR420TRPBF
    查询价格
    Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 2.4 A 3 Ω AVALANCHE RATED 400 mJ 37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 8 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-12 21:11:46 Not Compliant EAR99 8 weeks DPAK-3/2
    对比
    IRFR9024PBF
    查询价格
    Yes Yes Active P-CHANNEL YES SINGLE 2 60 V 1 8.8 A 280 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2025-08-04 01:16:40 TO-252AA 3 Not Compliant EAR99 8 weeks
    对比
    IRFZ44NSTRLPBF
    查询价格
    Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 49 A 17.5 mΩ AVALANCHE RATED 150 mJ 88 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.8 W 94 W 160 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE 2065 2025-08-13 12:11:48 Not Compliant EAR99 IRFZ44NSTRLPBF D2PAK-3/2
    对比
    IRF840SPBF
    查询价格
    Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ AVALANCHE RATED 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 32 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-07-05 00:46:38 D2PAK 3 Not Compliant EAR99 12 weeks
    对比
    IRFR110TRPBF
    查询价格
    Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 4.3 A 540 mΩ AVALANCHE RATED 100 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 17 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2025-08-12 21:39:30 TO-252AA 3 Compliant EAR99 8 weeks
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