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对比 | 制造商型号 | 制造商 | Composite Price | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | mfrid | Modified On | 零件包装代码 | 针数 | Reach Compliance Code | ECCN代码 | Factory Lead Time | YTEOL | Source Content uid | Country Of Origin | 包装说明 | |
对比 | IRF540PBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 28 A | 77 mΩ | AVALANCHE RATED | 230 mJ | 120 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 110 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | 2516 | 2025-08-13 17:52:28 | TO-220AB | 3 | Not Compliant | EAR99 | 40 weeks | ||||||||||
对比 | IRFR9024NTRPBF | 查询价格 | 低 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | 2025-08-13 00:35:10 | Not Compliant | EAR99 | IRFR9024NTRPBF | |||||||||||
对比 | IRF9Z24SPBF | 查询价格 | 低 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 11 A | 280 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 44 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-13 03:13:21 | 3 | Compliant | EAR99 | 8 weeks | LEAD FREE, D2PAK-3 | ||||||||||
对比 | IRFBF20SPBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 900 V | 1 | 1.7 A | 8 Ω | AVALANCHE RATED | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 6.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-13 19:47:30 | 3 | Compliant | EAR99 | 8 weeks | LEAD FREE, D2PAK-3 | ||||||||||
对比 | IRF640SPBF | 查询价格 | 低 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 18 A | 180 mΩ | AVALANCHE RATED | 580 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 130 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 40 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-13 07:26:58 | Not Compliant | EAR99 | 12 weeks | LEAD FREE, PLASTIC, D2PAK-3 | ||||||||||||
对比 | IRF9540SPBF | 查询价格 | 低 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 19 A | 200 mΩ | AVALANCHE RATED | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2025-08-13 23:13:02 | 3 | Not Compliant | EAR99 | 8 weeks | ||||||||||
对比 | TPH1400ANH,L1Q(M | 查询价格 | 低 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 42 A | 13.6 mΩ | 46 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 W | 91 A | SWITCHING | SILICON | S-PDSO-F8 | 150 °C | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | FLAT | DUAL | 2484 | 2025-08-13 13:06:34 | Unknown | EAR99 | TPH1400ANH,L1Q(M | SOP-8 | |||||||||||||||||||
对比 | IRF740SPBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 10 A | 550 mΩ | AVALANCHE RATED | 520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 40 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2025-08-13 19:19:31 | D2PAK | 4 | Not Compliant | EAR99 | 8 weeks | |||||||||
对比 | IRF520NPBF | 查询价格 | 低 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.7 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 47 W | 38 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | 2065 | 2025-08-14 11:58:55 | Not Compliant | EAR99 | 18 weeks | IRF520NPBF | ||||||||||||||
对比 | IRF9530SPBF | 查询价格 | 低 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-13 11:05:32 | Not Compliant | EAR99 | 12 weeks | ||||||||||||||
对比 | IRF5210STRLPBF | 查询价格 | 低 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 38 A | 60 mΩ | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | 120 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 140 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | 2025-08-13 02:38:03 | Not Compliant | EAR99 | IRF5210STRLPBF | |||||||||||
对比 | IRLR3114ZTRPBF | 查询价格 | 低 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 42 A | 6.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 260 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 500 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | 2025-08-14 08:29:29 | Not Compliant | EAR99 | IRLR3114ZTRPBF | LEAD FREE, PLASTIC, DPAK-3 | |||||||||||
对比 | IRF9530STRLPBF | 查询价格 | 低 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2025-08-05 22:27:46 | Compliant | EAR99 | 12 weeks | ||||||||||||
对比 | IRFR9220TRPBF | 查询价格 | 低 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.6 A | 1.5 Ω | AVALANCHE RATED | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 14 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-07-05 00:29:02 | TO-252AA | 3 | Not Compliant | EAR99 | 8 weeks | |||||||||
对比 | IRFR4105TRPBF | 查询价格 | 低 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 20 A | 45 mΩ | 65 mJ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 68 W | 100 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | 2025-08-13 14:07:39 | Not Compliant | EAR99 | 18 weeks | IRFR4105TRPBF | ||||||||||
对比 | IRFR420TRPBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.4 A | 3 Ω | AVALANCHE RATED | 400 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-12 21:11:46 | Not Compliant | EAR99 | 8 weeks | DPAK-3/2 | ||||||||
对比 | IRFR9024PBF | 查询价格 | 低 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE | 2 | 60 V | 1 | 8.8 A | 280 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2025-08-04 01:16:40 | TO-252AA | 3 | Not Compliant | EAR99 | 8 weeks | |||||||||||
对比 | IRFZ44NSTRLPBF | 查询价格 | 低 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED | 150 mJ | 88 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.8 W | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | 2065 | 2025-08-13 12:11:48 | Not Compliant | EAR99 | IRFZ44NSTRLPBF | D2PAK-3/2 | |||||||||
对比 | IRF840SPBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | AVALANCHE RATED | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 32 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-07-05 00:46:38 | D2PAK | 3 | Not Compliant | EAR99 | 12 weeks | |||||||||
对比 | IRFR110TRPBF | 查询价格 | 低 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 4.3 A | 540 mΩ | AVALANCHE RATED | 100 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 17 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2025-08-12 21:39:30 | TO-252AA | 3 | Compliant | EAR99 | 8 weeks |