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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 包装说明 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | Date Of Intro | YTEOL | 零件包装代码 | 针数 | HTS代码 | |
对比 | NVMFS5C442NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 130 A | 3.7 mΩ | 265 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 83 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C442NLAFT1G | 2260 | 2024-03-02 19:43:39 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 2017-04-03 | 5.6 | ||||||||||
对比 | NVMFS5C430NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 2.2 mΩ | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C430NLAFT1G | 2260 | 2024-03-02 19:29:54 | SOP-8 | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | |||||||||||||
对比 | NVMFS5C404NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLAFT1G | 2260 | 2024-03-02 20:02:43 | SO-8FL, DFN5, 6 PIN | 506EZ | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | ||||||||||
对比 | NVMFS5C404NLWFAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLWFAFT1G | 2260 | 2024-03-02 20:25:55 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | ||||||||||
对比 | NVMFS5C460NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 5 | 40 V | 1 | 78 A | 7.2 mΩ | 107 mJ | 22 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C460NLAFT1G | 2260 | 2024-03-02 20:16:22 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | ||||||||||
对比 | NVMFS5C426NLT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 237 A | 1.8 mΩ | 453 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 1.48 kA | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C426NLT1G | 2260 | 2024-03-02 20:08:33 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 5.6 | |||||||||||
对比 | NVMFS5C670NLWFAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 8.8 mΩ | 166 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 440 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C670NLWFAFT1G | 2260 | 2023-12-11 14:18:21 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | |||||||||||||||
对比 | NVMFS5C604NLWFAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C604NLWFAFT1G | 2260 | 2024-03-02 20:33:30 | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | ||||||||||
对比 | NVMFS5C612NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 250 A | 2.3 mΩ | 451 mJ | 45 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 167 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C612NLAFT1G | 2260 | 2024-03-02 18:55:05 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 2017-02-24 | 5.6 | ||||||||||
对比 | NTD6416ANT4G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 17 A | 81 mΩ | 43 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 71 W | 62 A | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTD6416ANT4G | 2260 | 2023-12-11 14:18:21 | DPAK-3 | 369AA | not_compliant | Mainland China, Malaysia | EAR99 | [object Object] | 5.75 | DPAK 4 LEAD Single Gauge Surface Mount | 4 | |||||||||||
对比 | NTD2955T4G | onsemi | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 12 A | 180 mΩ | 216 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 55 W | 18 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTD2955T4G | 2260 | 2023-12-11 14:18:21 | 369C | not_compliant | Mainland China, Malaysia, Vietnam | EAR99 | [object Object] | 5.4 | DPAK (SINGLE GAUGE) TO-252 | 3 | 8541.29.00.75 | ||||||||||
对比 | SIHFR1N60A-GE3 | Vishay Siliconix | 查询价格 | Active | N-CHANNEL | YES | SINGLE | 1 | 1.4 A | METAL-OXIDE SEMICONDUCTOR | 36 W | 150 °C | 2526 | 2023-08-01 19:08:35 | , | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||
对比 | NTB25P06T4G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 27.5 A | 82 mΩ | 600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 80 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTB25P06T4G | 2260 | 2023-12-11 14:18:21 | D2PAK-3 | 418B-04 | not_compliant | Mainland China | EAR99 | [object Object] | 5.4 | D2PAK 2 LEAD | 3 | 8541.29.00.95 | ||||||||
对比 | HUF75339P3 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 75 A | 12 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN | THROUGH-HOLE | SINGLE | HUF75339P3 | 2260 | 2023-12-11 14:18:21 | 340AT | not_compliant | Mainland China | EAR99 | [object Object] | 5.15 | |||||||||||||||||
对比 | NVMFS5C468NT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 35 A | 12 mΩ | 75 mJ | 11 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 151 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C468NT1G | 2260 | 2024-03-02 19:39:45 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | [object Object] | 5.55 | |||||||||||
对比 | NVHL040N120SC1 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 1.2 kV | 1 | 60 A | 56 mΩ | 613 mJ | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 348 W | 240 A | SWITCHING | SILICON CARBIDE | TO-247 | R-PSFM-T3 | e3 | AEC-Q101 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | NVHL040N120SC1 | 2260 | 2023-12-11 14:18:21 | 340CX | not_compliant | Mainland China | EAR99 | [object Object] | 2020-01-15 | 6.52 | |||||||||||
对比 | FDB52N20TM | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 52 A | 49 mΩ | 2520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 357 W | 208 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDB52N20TM | 2260 | 2023-12-11 14:18:21 | D2PAK-3/2 | 418AJ | not_compliant | Mainland China | EAR99 | [object Object] | 6.12 | ||||||||||
对比 | NVTFS5116PLTAG | onsemi | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 6 A | 72 mΩ | 45 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.2 W | 126 A | SILICON | S-PDSO-F5 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | SQUARE | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVTFS5116PLTAG | 2260 | 2023-12-11 14:18:21 | WDFN-8 | 511AB | not_compliant | Malaysia | EAR99 | 5.4 | WDFN8 3.3x3.3, 0.65P | 8 | ||||||||||||
对比 | IRF840ASPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.1 W | 32 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2024-04-18 09:01:38 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | [object Object] | 6.25 | 3 | ||||||||||||||||
对比 | IRFR9024NTRPBF | Infineon Technologies AG | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 11 A | 175 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 62 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 38 W | 44 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFR9024NTRPBF | 2065 | 2024-04-18 09:06:26 | not_compliant | Mainland China, USA | EAR99 | [object Object] | 5.4 |