Sat Apr 20 2024 13:04:04 GMT+0800 (China Standard Time)

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功率场效应晶体管: 176,709 个筛选结果
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (40)
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极性/信道类型 (5)
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Most Relevant Technical Compliance Operating Conditions Physical Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
Modified On
包装说明
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
交付时间
Date Of Intro
YTEOL
零件包装代码
针数
HTS代码
对比
NVMFS5C442NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 130 A 3.7 mΩ 265 mJ 37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 83 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C442NLAFT1G 2260 2024-03-02 19:43:39 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 [object Object] 2017-04-03 5.6
对比
NVMFS5C430NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 2.2 mΩ 493 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C430NLAFT1G 2260 2024-03-02 19:29:54 SOP-8 488AA not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C404NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLAFT1G 2260 2024-03-02 20:02:43 SO-8FL, DFN5, 6 PIN 506EZ not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C404NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLWFAFT1G 2260 2024-03-02 20:25:55 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C460NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 5 40 V 1 78 A 7.2 mΩ 107 mJ 22 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 396 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C460NLAFT1G 2260 2024-03-02 20:16:22 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C426NLT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 237 A 1.8 mΩ 453 mJ 70 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 1.48 kA SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C426NLT1G 2260 2024-03-02 20:08:33 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 [object Object] 5.6
对比
NVMFS5C670NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 8.8 mΩ 166 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 440 A SILICON R-PDSO-F5 e3 AEC-Q101 1 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C670NLWFAFT1G 2260 2023-12-11 14:18:21 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C604NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 287 A 1.7 mΩ 776 mJ 40 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C604NLWFAFT1G 2260 2024-03-02 20:33:30 SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NVMFS5C612NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 250 A 2.3 mΩ 451 mJ 45 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 167 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C612NLAFT1G 2260 2024-03-02 18:55:05 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 [object Object] 2017-02-24 5.6
对比
NTD6416ANT4G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 17 A 81 mΩ 43 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 71 W 62 A SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD6416ANT4G 2260 2023-12-11 14:18:21 DPAK-3 369AA not_compliant Mainland China, Malaysia EAR99 [object Object] 5.75 DPAK 4 LEAD Single Gauge Surface Mount 4
对比
NTD2955T4G
onsemi
查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 12 A 180 mΩ 216 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 55 W 18 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTD2955T4G 2260 2023-12-11 14:18:21 369C not_compliant Mainland China, Malaysia, Vietnam EAR99 [object Object] 5.4 DPAK (SINGLE GAUGE) TO-252 3 8541.29.00.75
对比
SIHFR1N60A-GE3
Vishay Siliconix
查询价格
Active N-CHANNEL YES SINGLE 1 1.4 A METAL-OXIDE SEMICONDUCTOR 36 W 150 °C 2526 2023-08-01 19:08:35 , unknown EAR99
对比
NTB25P06T4G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 27.5 A 82 mΩ 600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 100 W 80 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTB25P06T4G 2260 2023-12-11 14:18:21 D2PAK-3 418B-04 not_compliant Mainland China EAR99 [object Object] 5.4 D2PAK 2 LEAD 3 8541.29.00.95
对比
HUF75339P3
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 75 A 12 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE HUF75339P3 2260 2023-12-11 14:18:21 340AT not_compliant Mainland China EAR99 [object Object] 5.15
对比
NVMFS5C468NT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 35 A 12 mΩ 75 mJ 11 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 151 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C468NT1G 2260 2024-03-02 19:39:45 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 [object Object] 5.55
对比
NVHL040N120SC1
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 60 A 56 mΩ 613 mJ 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 348 W 240 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T3 e3 AEC-Q101 175 °C -55 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Matte Tin (Sn) - annealed THROUGH-HOLE SINGLE NVHL040N120SC1 2260 2023-12-11 14:18:21 340CX not_compliant Mainland China EAR99 [object Object] 2020-01-15 6.52
对比
FDB52N20TM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 52 A 49 mΩ 2520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 357 W 208 A SWITCHING SILICON TO-263 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDB52N20TM 2260 2023-12-11 14:18:21 D2PAK-3/2 418AJ not_compliant Mainland China EAR99 [object Object] 6.12
对比
NVTFS5116PLTAG
onsemi
查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 6 A 72 mΩ 45 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.2 W 126 A SILICON S-PDSO-F5 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVTFS5116PLTAG 2260 2023-12-11 14:18:21 WDFN-8 511AB not_compliant Malaysia EAR99 5.4 WDFN8 3.3x3.3, 0.65P 8
对比
IRF840ASPBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 3.1 W 32 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2024-04-18 09:01:38 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 [object Object] 6.25 3
对比
IRFR9024NTRPBF
Infineon Technologies AG
查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 11 A 175 mΩ AVALANCHE RATED, HIGH RELIABILITY 62 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 38 W 44 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFR9024NTRPBF 2065 2024-04-18 09:06:26 not_compliant Mainland China, USA EAR99 [object Object] 5.4
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