Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 包装说明 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | YTEOL | 零件包装代码 | 针数 | Date Of Intro | |
对比 | FCPF400N60 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 10 A | 400 mΩ | 211.6 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 31 W | 30 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Matte Tin (Sn) - annealed | THROUGH-HOLE | SINGLE | FCPF400N60 | 2260 | 2024-03-02 18:48:48 | SC-91A, TO-220F, 3 PIN | 221AT | not_compliant | Mainland China | EAR99 | [object Object] | 3 | ||||||||||||
对比 | IRFP048N-202PBF | International Rectifier | 查询价格 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 64 A | 16 mΩ | HIGH RELIABILITY | 270 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 210 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | 2073 | 2022-02-07 16:29:42 | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | ||||||||||||||||||
对比 | JANTXV2N6790 | Defense Logistics Agency | 查询价格 | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 200 V | 1 | 3.5 A | 800 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Qualified | MILITARY STANDARD (USA) | -55 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 4317493 | 2023-12-01 19:24:33 | unknown | 6.55 | ||||||||||||||||||||||
对比 | NVH4L025N065SC1 | onsemi | 查询价格 | Yes | Active | NOT SPECIFIED | NOT SPECIFIED | NVH4L025N065SC1 | 2260 | 2024-01-02 01:18:35 | 340CJ | unknown | |||||||||||||||||||||||||||||||||||||||||||
对比 | 934063318115 | NXP Semiconductors | 查询价格 | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | 1 | 75 A | 8 mΩ | LOGIC LEVEL COMPATIBLE | 198 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 356 A | SWITCHING | SILICON | MO-235 | R-PSSO-G4 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 934063318115 | 2245 | 2022-02-08 17:26:30 | SMALL OUTLINE, R-PSSO-G4 | unknown | EAR99 | ||||||||||||||||||||||
对比 | PJL9411_R2_00001 | PanJit Semiconductor | 查询价格 | Yes | Not Recommended | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 8.4 A | 20 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 33.6 A | SWITCHING | SILICON | R-PDSO-G8 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2397849 | 2024-04-02 18:12:49 | SOP-8 | compliant | EAR99 | 3 | |||||||||||||||||||||
对比 | UT6JE5TCR | ROHM Semiconductor | 查询价格 | Yes | Active | 2363 | 2024-04-24 09:34:46 | compliant | |||||||||||||||||||||||||||||||||||||||||||||||
对比 | FDB6670AL_NL | Fairchild Semiconductor Corporation | 查询价格 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 80 A | 6.5 mΩ | LOGIC LEVEL COMPATIBLE | 114 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 75 W | 240 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FDB6670AL_NL | 1978 | 2023-08-02 09:33:37 | TO-263AB, 3 PIN | not_compliant | EAR99 | 0 | D2PAK | 4 | ||||||||||||
对比 | AP4529GH | Advanced Power Electronics Corp | 查询价格 | Obsolete | N-CHANNEL AND P-CHANNEL | YES | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 4 | 40 V | 2 | 7.4 A | 32 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 A | SWITCHING | SILICON | TO-252 | R-PSSO-G4 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | AP4529GH | 1623862 | 2022-12-05 20:15:13 | ROHS COMPLIANT PACKAGE-5 | compliant | EAR99 | 0 | TO-252 | 4 | |||||||||||||||||||
对比 | JANSR2N7390U | Infineon Technologies AG | 查询价格 | No | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 200 V | 1 | 4 A | 920 mΩ | 171 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 16 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Qualified | MIL-19500/630 | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | Tin/Lead (Sn/Pb) | NO LEAD | QUAD | JANSR2N7390U | 2065 | 2024-04-02 20:17:52 | CHIP CARRIER, R-CQCC-N15 | compliant | EAR99 | 6.7 | ||||||||||||||||
对比 | BUK9608-55A/T3 | Nexperia | 查询价格 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 125 A | 8.5 mΩ | 670 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 503 A | SWITCHING | SILICON | R-PSSO-G2 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | BUK9608-55A/T3 | 229119436 | 2022-06-02 06:21:12 | PLASTIC, D2PAK-3 | unknown | EAR99 | 0 | 2017-02-01 | |||||||||||||||||||
对比 | SSFQ3911 | Suzhou Good-Ark Electronics Co Ltd | 查询价格 | Active | 116151918 | 2022-01-29 09:14:06 | compliant | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||
对比 | FDS9958-F085 | onsemi | 查询价格 | Yes | Obsolete | P-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 60 V | 2 | 2.9 A | 105 mΩ | 54 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2 W | 12 A | SWITCHING | SILICON | R-PDSO-G8 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | FDS9958-F085 | 2260 | 2023-12-11 14:18:21 | ROHS COMPLIANT SOP-8 | 751EB | compliant | EAR99 | 0 | SO 8L NB | ||||||||||||||
对比 | 17P10G-TM3-T | Unisonic Technologies Co Ltd | 查询价格 | Yes | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 17 A | 180 mΩ | 135 mJ | 130 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 52 W | 68 A | SWITCHING | SILICON | TO-251 | R-PSIP-T3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | 4317462 | 2024-01-01 21:40:23 | , | compliant | EAR99 | |||||||||||||||||||
对比 | 6NM50G-TN3-R | Unisonic Technologies Co Ltd | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 6 A | 900 mΩ | 155 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 21 W | 24 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 4317462 | 2023-12-01 19:03:53 | compliant | EAR99 | 6.25 | |||||||||||||||||||
对比 | IRFI540NPBF | Infineon Technologies AG | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 20 A | 52 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 110 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | -55 °C | 260 | 40 | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | IRFI540NPBF | 2065 | 2024-04-24 08:37:56 | TO-220, 3 PIN | compliant | Mainland China | EAR99 | [object Object] | 5.1 | ||||||||||
对比 | IRFIZ44N-108 | Infineon Technologies AG | 查询价格 | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 55 V | 1 | 31 A | 24 mΩ | HIGH RELIABILITY | 210 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | R-PSFM-T3 | e3 | Not Qualified | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | IRFIZ44N-108 | 2065 | 2022-09-02 14:01:14 | unknown | EAR99 | 0 | |||||||||||||||||||
对比 | IRLZ44N-012PBF | Infineon Technologies AG | 查询价格 | Yes | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 55 V | 1 | 41 A | 22 mΩ | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | IRLZ44N-012PBF | 2065 | 2022-08-02 15:05:38 | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | 0 | ||||||||||||||||||||
对比 | IPD90P04P405AUMA1 | Infineon Technologies AG | 查询价格 | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 40 V | 1 | 90 A | 4.7 mΩ | 60 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 A | SILICON | TO-252 | R-PSSO-G2 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | 2065 | 2023-12-01 19:00:34 | GREEN, PLASTIC PACKAGE-3 | compliant | EAR99 | 5.6 | ||||||||||||||||||||||||
对比 | JANTX2N7221UPBF | Infineon Technologies AG | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 400 V | 1 | 10 A | 700 mΩ | HIGH RELIABILITY | 650 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 40 A | SWITCHING | SILICON | R-XBCC-N3 | MIL-19500 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | JANTX2N7221UPBF | 2065 | 2023-12-01 19:02:17 | CHIP CARRIER, R-XBCC-N3 | compliant | EAR99 | 6.95 |