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小信号场效应晶体管: 53,455 个筛选结果
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (Abs) (ID) (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (8)
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端子数量 (21)
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极性/信道类型 (5)
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Most Relevant Technical Compliance Operating Conditions Physical Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (Abs) (ID) 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
Modified On
零件包装代码
包装说明
针数
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
交付时间
YTEOL
HTS代码
Date Of Intro
对比
2V7002LT1G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2V7002LT1G 2022-10-04 09:26:24 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
2N7002LT1G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT1G 2022-10-03 14:29:53 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52 8541.21.00.95
对比
2N7002,215
Nexperia 查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 300 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 IEC-60134 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL 2N7002,215 2022-11-29 02:01:18 TO-236 3 SOT23 compliant Mainland China EAR99 6.52 8541.21.00.95 1995-04-01
对比
2N7002L
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002L 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
2N7002LT3G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT3G 2022-10-03 14:29:53 SOT-23 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
2N7002LT7G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-236 R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002LT7G 2022-10-03 14:29:53 318-08 compliant Mainland China EAR99 [object Object] 6.52 2019-03-14
对比
2N7002
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS138LT3G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138LT3G 2022-10-03 14:29:53 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BVSS138LT1G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BVSS138LT1G 2022-10-04 05:18:28 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS138LT1G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138LT1G 2022-10-03 14:29:53 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS84LT1G
onsemi 查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS84LT1G 2022-10-03 14:29:53 SOT-23 SMALL OUTLINE, R-PDSO-G3 3 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS138
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 220 mA 6 Ω LOGIC LEVEL COMPATIBLE 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS123LT1G
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 170 mA 6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS123LT1G 2022-10-03 14:29:53 SOT-23 ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318-08 compliant Mainland China EAR99 [object Object] 6.52 8541.29.00.95
对比
BSS138L
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 10 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138L 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.52
对比
BSS123
onsemi 查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS123 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.52 8541.21.00.95 1996-09-01
对比
BSS84,215
Nexperia 查询价格
Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 1 LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON TO-236AB R-PDSO-G3 e3 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL BSS84,215 2022-11-29 02:01:18 TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant Mainland China EAR99 3 8541.21.00.95
对比
BST82,215
Nexperia 查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 80 V 1 175 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G3 e3 1 150 °C -65 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL BST82,215 2022-11-29 02:01:18 TO-236 SMALL OUTLINE, R-PDSO-G3 3 SOT23 compliant Mainland China EAR99 3 2017-02-01
对比
BS170
onsemi 查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170 2022-10-03 14:29:53 TO-92 TO-92, 3 PIN 3 135AN compliant Mainland China EAR99 [object Object] 6.08
对比
BSS84
onsemi 查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS84 2022-10-03 14:29:53 SOT-23, 3 PIN 318-08 compliant Philippines EAR99 [object Object] 6.52
对比
J111-D26Z
onsemi 查询价格
Yes Active N-CHANNEL NO SINGLE 3 1 30 Ω 5 pF JUNCTION DEPLETION MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM J111-D26Z 2022-10-03 14:29:53 135AR compliant Mainland China EAR99 6.08
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