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小信号场效应晶体管: 51,403 个筛选结果
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (8)
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端子数量 (21)
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极性/信道类型 (5)
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Most Relevant Technical Compliance Operating Conditions Physical Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
Modified On
包装说明
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
交付时间
YTEOL
零件包装代码
针数
HTS代码
Date Of Intro
对比
2N7002
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 2N7002 2260 2024-01-02 00:30:49 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
对比
BSS138
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 220 mA 6 Ω LOGIC LEVEL COMPATIBLE 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS138 2260 2024-01-02 00:49:16 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5
对比
BSS84
onsemi
查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 130 mA 10 Ω 12 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 mW SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS84 2260 2024-01-02 01:41:18 318-08 compliant Philippines EAR99 [object Object] 6.5
对比
BS170
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-226AA O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170 2260 2024-04-02 20:23:50 TO-92, 3 PIN 135AN compliant Mainland China EAR99 [object Object] 6.05 TO-92 3
对比
BSS123
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 10 Ω 6 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW 360 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BSS123 2260 2024-01-01 23:25:57 SOT-23, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5 8541.21.00.95 1996-09-01
对比
2N7002-7-F
SPC Multicomp
查询价格
Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 mW 200 mW SWITCHING SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL 4165152 2024-01-02 01:41:18 SOT-23, 3 PIN unknown EAR99 6.5 8541.21.00.95
对比
2N7000
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω LOGIC LEVEL COMPATIBLE 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C 240 30 PLASTIC/EPOXY ROUND CYLINDRICAL Matte Tin (Sn) - annealed THROUGH-HOLE BOTTOM 2N7000 2260 2024-01-02 01:14:25 TO-226, 3 PIN 135AN compliant Mainland China EAR99 [object Object] 6.05 TO-92 3
对比
2N7000-D26Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM 2N7000-D26Z 2260 2024-01-02 00:32:40 135AR compliant Mainland China EAR99 6.05
对比
2N7000-D74Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM 2N7000-D74Z 2260 2024-01-02 01:53:14 135AR compliant Mainland China EAR99 6.05
对比
2N7000-D75Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 200 mA 5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 400 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C -55 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM 2N7000-D75Z 2260 2024-01-02 00:15:25 135AR compliant Mainland China EAR99 6.05
对比
BS170-D26Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170-D26Z 2260 2024-04-02 18:28:45 TO-92, 3 PIN 135AR compliant Mainland China EAR99 6.05
对比
BS170-D27Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170-D27Z 2260 2024-04-02 18:48:53 TO-92, 3 PIN 135AR compliant Mainland China EAR99 6.05
对比
2N7002LT3G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002LT3G 2260 2024-04-02 18:30:15 318-08 compliant Mainland China EAR99 [object Object] 6.5 SOT-23 (TO-236) 3 LEAD 3
对比
2N7002LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 115 mA 7.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002LT1G 2260 2024-04-02 19:36:45 318-08 compliant Mainland China EAR99 [object Object] 6.5 SOT-23 (TO-236) 3 LEAD 3 8541.21.00.95
对比
BSS138LT3G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL BSS138LT3G 2260 2024-04-02 19:02:18 ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5 SOT-23 (TO-236) 3 LEAD 3
对比
BSS138LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 50 V 1 200 mA 3.5 Ω 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL BSS138LT1G 2260 2024-04-02 19:55:58 ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5 SOT-23 (TO-236) 3 LEAD 3
对比
2N7002ET1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 260 mA 2.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL 2N7002ET1G 2260 2024-04-02 19:21:07 HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant Mainland China EAR99 6.5 SOT-23 (TO-236) 3 LEAD 3
对比
BS170-D75Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 500 mA 5 Ω 10 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 830 mW SWITCHING SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BS170-D75Z 2260 2024-04-02 20:07:53 TO-92, 3 PIN 135AR compliant Mainland China EAR99 6.05
对比
BSS123LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 170 mA 6 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 225 mW SWITCHING SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL BSS123LT1G 2260 2024-01-02 03:09:50 ROHS COMPLIANT, CASE 318-08, 3 PIN 318-08 compliant Mainland China EAR99 [object Object] 6.5 SOT-23 (TO-236) 3 LEAD 3 8541.29.00.95
对比
2N7002Q-7-F
Diodes Incorporated
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 170 mA 5 Ω HIGH RELIABILITY 5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 540 mW SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 1926 2024-04-18 09:01:38 compliant EAR99 [object Object] 6.5
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