| 名称 |
厂商 |
描述 |
|
FQD5N15TM
|
Rochester Electronics |
Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
|
VP0300M
|
Atmel Corporation |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M
|
Vishay Siliconix |
|
TRANSISTOR 500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA, TO-237, 3 PIN, FET General Purpose Small Signal
|
|
|
VP0300M
|
TEMIC SEMICONDUCTORS |
|
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M
|
American Microsemiconductor, Inc. |
|
小信号, 场效应晶体管
SMALL SIGNAL, FET
|
|
|
VP0300M-1TA
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M-2
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M-2-18
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M-2TR1
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M18
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M18-1
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
VP0300M18-2
|
Vishay Intertechnology, Inc. |
|
500 mA, 30 V, P沟道, 硅, 小信号, 场效应管, TO-237AA
500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-237AA
|
|
|
