| 1-6450560-9最小击穿电压 |
60.0 V
|
| 1-6450560-9端子数量 |
3
|
| 1-6450560-9加工封装描述 |
ROHS COMPLIANT, PLASTIC, D2PAK-3
|
| 1-6450560-9reach_compliant |
Yes
|
| 1-6450560-9欧盟RoHS规范 |
Yes
|
| 1-6450560-9状态 |
Active
|
| 1-6450560-9额定雪崩能量 |
281.0 mJ
|
| 1-6450560-9结构 |
SINGLE WITH BUILT-IN DIODE
|
| 1-6450560-9最大漏电流 |
200.0 A
|
| 1-6450560-9最大漏极导通电阻 |
0.0051 ohm
|
| 1-6450560-9场效应晶体管技术 |
METAL-OXIDE SEMICONDUCTOR
|
| 1-6450560-9jesd_30_code |
R-PSSO-G3
|
| 1-6450560-9moisture_sensitivity_level |
2
|
| 1-6450560-9元件数量 |
1.0
|
| 1-6450560-9操作模式 |
ENHANCEMENT MODE
|
| 1-6450560-9包装材料 |
PLASTIC/EPOXY
|
| 1-6450560-9包装形状 |
RECTANGULAR
|
| 1-6450560-9包装尺寸 |
SMALL OUTLINE
|
| 1-6450560-9polarity_channel_type |
N-CHANNEL
|
| 1-6450560-9最大漏电流脉冲 |
400.0 A
|
| 1-6450560-9表面贴装 |
YES
|
| 1-6450560-9端子形式 |
GULL WING
|
| 1-6450560-9端子位置 |
SINGLE
|
| 1-6450560-9晶体管应用 |
SWITCHING
|
| 1-6450560-9晶体管元件材料 |
SILICON
|
| 1-6450560-9additional_feature |
AVALANCHE RATED
|
