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EDB2432B4MA-1DAAT-F-D

厂商名称: Micron Technology, Inc.

EDB2432B4MA-1DAAT-F-D元件分类: 存储器

EDB2432B4MA-1DAAT-F-D英文描述:
DDR DRAM, 64MX32, CMOS, PBGA134

EDB2432B4MA-1DAAT-F-D相关的参考设计

  • 参数列表
  • 在这购买
EDB2432B4MA-1DAAT-F-D功能数量 1
EDB2432B4MA-1DAAT-F-D端子数量 134
EDB2432B4MA-1DAAT-F-D额定供电电压 1.2  V
EDB2432B4MA-1DAAT-F-D最小供电/工作电压 1.14  V
EDB2432B4MA-1DAAT-F-D最大供电/工作电压 1.3  V
EDB2432B4MA-1DAAT-F-D加工封装描述 FBGA-134
EDB2432B4MA-1DAAT-F-Dreach_compliant Yes
EDB2432B4MA-1DAAT-F-D状态 Active
EDB2432B4MA-1DAAT-F-D存取方式 SINGLE BANK PAGE BURST
EDB2432B4MA-1DAAT-F-Djesd_30_code R-PBGA-B134
EDB2432B4MA-1DAAT-F-D存储密度 2.147483648E9  bit
EDB2432B4MA-1DAAT-F-D内存IC类型 DDR DRAM
EDB2432B4MA-1DAAT-F-D内存宽度 32
EDB2432B4MA-1DAAT-F-D端口数 1
EDB2432B4MA-1DAAT-F-D位数 6.7108864E7  words
EDB2432B4MA-1DAAT-F-D位数 64M
EDB2432B4MA-1DAAT-F-D操作模式 SYNCHRONOUS
EDB2432B4MA-1DAAT-F-D组织 64MX32
EDB2432B4MA-1DAAT-F-D包装材料 PLASTIC/EPOXY
EDB2432B4MA-1DAAT-F-Dpackage_code VFBGA
EDB2432B4MA-1DAAT-F-D包装形状 RECTANGULAR
EDB2432B4MA-1DAAT-F-D包装尺寸 GRID ARRAY, VERY THIN PROFILE, FINE PITCH
EDB2432B4MA-1DAAT-F-Dseated_height_max 1.0  mm
EDB2432B4MA-1DAAT-F-D表面贴装 YES
EDB2432B4MA-1DAAT-F-D工艺 CMOS
EDB2432B4MA-1DAAT-F-D端子形式 BALL
EDB2432B4MA-1DAAT-F-D端子间距 0.65  mm
EDB2432B4MA-1DAAT-F-D端子位置 BOTTOM
EDB2432B4MA-1DAAT-F-Dlength 11.5  mm
EDB2432B4MA-1DAAT-F-Dwidth 10.0  mm
EDB2432B4MA-1DAAT-F-Dadditional_feature SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

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