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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2N1544A | Digitron Semiconductors | TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-3 | - | |||||
| 2N1796 | International Rectifier | Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 250V V(DRM), 250V V(RRM), 1 Element, TO-208AD, TO-83, 2 PIN | - | |||||
| AD | PMPB27EP,115 | Nexperia | MOSFET/FET,30 V, single P-channel Trench MOSFET | |||||
| 2N100W-03 | API Technologies Corp | Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE | - | |||||
| 2N1529 | GPD Optoelectronics Corp | Transistor | - | |||||
| 2N100W-10FM | Cobham PLC | Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE | - | |||||
| 2N1987 | Continental Device India Ltd | Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | - | |||||
| 2N1487 | Central Semiconductor Corp | Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-3VAR, 2 PIN | - | |||||
| 2N100L-C-TA3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, | - | |||||
| 2N1843 | Motorola Semiconductor Products | Silicon Controlled Rectifier, 16A I(T)RMS, 10000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element, CASE 263-04, 2 PIN | - | |||||
| 2N1722 | Electronic Transistors Corp | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-53, TO-53, 3 PIN | - | |||||
| SL42N120A | Slkor 萨科微  | - | ||||||
| 2N1702 | ISC 无锡固电 | - | ||||||
| IRFSL52N15D | ISC 无锡固电 | - | ||||||
| IPP072N10N3 | ISC 无锡固电 | - | ||||||
| IPD082N10N3 | ISC 无锡固电 | - | ||||||
| 12N18 | ISC 无锡固电 | - | ||||||
| AKZE12N10 | AK 奥科 | - | ||||||
| A102G1206C0G102N1* | VIIYONG 微容 | - | ||||||
| YFW2N10 | YFW 佑风微 | - | ||||||
| YFW12N10AMJ | YFW 佑风微 | - | ||||||
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