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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2N2687 | Semitronics Corp | Silicon Controlled Rectifier, 0.28A I(T)RMS, 180mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18 | - | |||||
| 2N2907AC3C-JQRS.GBDM | TT Electronics Power and Hybrid / Semelab Limited | 600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BA, HERMETIC SEALED PACKAGE-4 | - | |||||
| AD | BT150-500R,127 | WeEn | 晶体闸流管/双向可控硅,WeEn - BT150-500R - Silicon Controlled Rectifier - TO-220AB | |||||
| 2N2142 | Silicon Transistor Corporation | Power Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin, TO-3, 2 PIN | - | |||||
| 2N2905 | Space Power Electronics Inc | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, PNP, Silicon, TO-39, TO-39, 3 PIN | - | |||||
| 2N2420 | Intersil Corporation | 2N2420 | - | |||||
| 2N2867 | Semitronics Corp | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN | - | |||||
| 2N2218 | Semitronics Corp | Small Signal Bipolar Transistor, 0.8A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | - | |||||
| 2N2453 | Freescale Semiconductor | TRANSISTOR,BJT,PAIR,NPN,30V V(BR)CEO,50MA I(C),TO-77 | - | |||||
| 2N2764 | Silicon Transistor Corporation | Power Bipolar Transistor, 30A I(C), NPN | - | |||||
| 2N200W-10 | Cobham RFMW Solutions | Fixed Attenuator, 0MHz Min, 2500MHz Max, ROHS COMPLIANT PACKAGE | - | |||||
| SJK-2N24000M3C0430E9 | SJK 晶科鑫 | SMD2520 4PIN OSC 24.000MHZ 3.3V CMOS, Oscillators, XO, 24.000MHZ, ±30ppm, 1.8~3.3V | - | |||||
| BL02N20-3L | Galaxy 银河微 | - | ||||||
| 2N2955 | ISC 无锡固电 | - | ||||||
| IXFP72N20X3M | ISC 无锡固电 | - | ||||||
| WTM602N250U | SWST 先科 | - | ||||||
| 2N2907AU | SWST 先科 | - | ||||||
| 2N2484 | SWST 先科 | - | ||||||
| HSK02N20 | HUASHUO 华朔 | - | ||||||
| SLI_B32N20C | Maplesemi 美浦森 | - | ||||||
| WSDF23B2N2H | Winsemi 稳先微 | - | ||||||
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