对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2N7002 | Microdiode Semiconductor | - | ||||||
2N7002 | National Semiconductor Corporation | TRANSISTOR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | - | |||||
AD | AUIRG4PH50S | Infineon Technologies | IGBT,AUIRG4PH50 - Automotive IGBT Discretes | |||||
2N7002 | InterFET Corporation | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | - | |||||
2N7002 | Samsung Semiconductor | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
2N7002 | Silicon Standard Corp | Transistor, | - | |||||
2N7002 | Calogic Inc | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
2N7002 | KEC | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
2N7002 | Bytesonic Corporation | Transistor | - | |||||
2N7002 | STMicroelectronics | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3 | - | |||||
2N7002 | SLKOR | N-Channel Enhancement-Mode MOSFETs, VDS=60V, ID=0.115A, RDS(ON)<7.5Ω@VGS=5V, SOT-23 package, lead-free, surface mount. | - | |||||
2N7002 | MDD 辰达行 | - | ||||||
2N7002KM | Shikues 时科 ![]() | High Density Cell Design for Low RDS(ON), Voltage Controlled Small Signal Switch, Small Outline Surface Mount Package, RoHS compliant / Green EMC. | - | |||||
2N7002K | Slkor 萨科微 ![]() | 60V, 0.3A, VGS ±20V, TJ 150°C, TSTG -50 to 155°C, RθJA 357°C/W, 3.5Ω@10V, 4.5Ω@4.5V, Trench Power MV. | - | |||||
L2N7002KN3T5G | LRC 乐山无线 | - | ||||||
L2N7002KWT1G | LRC 乐山无线 | - | ||||||
L2N7002LT1G | LRC 乐山无线 | - | ||||||
L2N7002KX4T5G | LRC 乐山无线 | - | ||||||
L2N7002M3T5G | LRC 乐山无线 | - | ||||||
L2N7002SWT1G | LRC 乐山无线 | - | ||||||
2N7002H | Galaxy 银河微 | - |