对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2N7002L | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | - | |||||
2N7002L | ON Semiconductor | N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω N-Channel MOSFET 60V 115mA 7.5 ?, 3000-REEL | ¥1.8965 | |||||
AD | A2T21H360-24SR6 | NXP Semiconductor | 射频/微波组件,Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |||||
2N7002L | Motorola Semiconductor Products | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | - | |||||
2N7002L | Motorola Mobility LLC | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | - | |||||
2N7002L | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | - | |||||
2N7002L | Atmel Corporation | Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | - | |||||
2N7002L | Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,SOT-23 | - | |||||
2N7002LG-AE2-R | Unisonic Technologies Co Ltd | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE PACKAGE-3 | - | |||||
2N7002LLG-AE2-R | Unisonic Technologies Co Ltd | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE PACKAGE-3 | - | |||||
2N7002LT1 | Motorola Semiconductor Products | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | - | |||||
2N7002LT1-TP | Micro Commercial Components | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN | - | |||||
2N7002LT1G | ON Semiconductor | SOT23, N-Ch Mosfet - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, SOT-23 (TO-236) 3 LEAD, 3000-REEL | ¥1.3546 | |||||
2N7002LT1 | Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,115MA I(D),TO-236 | - | |||||
2N7002LT1 | Micro Commercial Components | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN | - | |||||
2N7002LLG-AE3-R | Unisonic Technologies Co Ltd | Transistor | - | |||||
2N7002L-AL6-R | Unisonic Technologies Co Ltd | Transistor | - | |||||
2N7002L-E3 | Vishay Intertechnologies | TRANSISTOR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET General Purpose Small Signal | - | |||||
2N7002LT7G | ON Semiconductor | SOT23, N-Ch Mosfet - 60V 115MA 7.5Ohm SOT23, N-Ch Mosfet - 60V 115MA 7.5O, 3500-REEL | - | |||||
2N7002LT3G | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | - | |||||
L2N7002LT1G | LRC Leshan Radio Co Ltd | VDSS (V):60, VGS(V):20, ID (A):0.115, VGSth Min (V):1, VGSth Max (V):2 | - |