对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
ADR125BUJZ-REEL7 | Analog Devices Inc | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO6, ROHS COMPLIANT, MO-193AA, TSOT-6, Voltage Reference | - | |||||
ADR293FR | Analog Devices Inc | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO8, MS-012AA, SOIC-8, Voltage Reference | - | |||||
AD | ADR420ARZ | Analog Devices | 电压基准,ADR420 - UltraPrecision, Low Noise, 2.048V XFET Voltage Reference | |||||
ADR2 | Thomas & Betts | Wire Terminal | ¥50.7983 | |||||
ADR01BKS-R2 | Rochester Electronics LLC | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10V, PDSO5, MO-203-AA, SC-70, 5 PIN | - | |||||
ADR291GR-REEL | Rochester Electronics LLC | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8, MS-012AA, SOIC-8 | - | |||||
ADRZ423BRZ | Analog Devices Inc | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO8, MS-012AA, SOIC-8, Voltage Reference | - | |||||
ADR425AR-REEL7 | Analog Devices Inc | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5V, PDSO8, MS-012AA, SOIC-8 | - | |||||
ADR02AUJ-R2 | Analog Devices Inc | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO5, MO-193-AB, TSOT-23, 5 PIN, Voltage Reference | - | |||||
ADR433BR | Rochester Electronics LLC | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO8, MS-012AA, SOIC-8 | - | |||||
ADR293FR-REEL | Analog Devices Inc | IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO8, MS-012AA, SOIC-8, Voltage Reference | - | |||||
ADR540BRTZ-REEL7 | Analog Devices Inc | IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 4.096 V, PDSO3, ROHS COMPLIANT, TO-236AB, SOT-23, 3 PIN, Voltage Reference | - | |||||
ADR512ART-R2 | Rochester Electronics LLC | 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.2V, PDSO3, SOT-23, 3 PIN | - | |||||
ADR425ARZ-REEL7 | Rochester Electronics LLC | 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 5 V, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8 | - | |||||
CW24C128ADR | 武汉芯源(CW) | 128Kbit(16384 x 8)串行I2C总线EEPROM, 1.7V-5.5V, SOP-8, 1M, 128Kbit | - | |||||
CWS65R290ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, TO-252-2L, 650V/Min | - | |||||
CWS70R430ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, TO-252-2L, 700V/Min | - | |||||
CWS5N65ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, DPAK-3, 650V/Min | - | |||||
CWS5N70ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, TO-252-2L, 700V/Min | - | |||||
CWS7N65ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, TO-252-2L, 650V/Min | - | |||||
CWS55R580ADR | 武汉芯源(CW) | N沟道基于超级结技术的功率MOSFET, TO-252-2L, 550V/Min | - |