AM4

Optoelectronic Device

Analog Circuit

FIFO, 1KX9, 45ns, Asynchronous, CMOS, CQCC32

Dual-Port SRAM, 1KX8, 35ns, CMOS, CQCC48, 0.040 INCH PITCH, LCC-48

Memory Circuit, 4MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA73, 8 X 11.60 MM, FBGA-73

Multi-Port SRAM, 4KX16, 35ns, CMOS, CQCC84,

Memory Circuit, 4MX16, CMOS, PBGA89, 10 X 8 MM, FBGA-89

Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93

Memory Circuit, 4MX16, CMOS, PBGA73, 11.60 X 8 MM, 0.80 MM PITCH, FBGA-73

FIFO, 512X9, 35ns, Asynchronous, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

DC/DC Converter; Product Weight (grams): 17; Input voltage min (V): 36; Input voltage max (V): 72; Output voltage min: 5; Output voltage max: 5; Output voltage dual assymetric (y/n): Single; Output Power (W): 4; Max Output current (A): 0.8; Efficiency (%): 80; Max Capacitive load (µF): 1000; Package type: DIP24; Mounting: PCB; W (in): 0.8; L (in): 1.25; H (in): 0.4; W (mm): 20.32; L (mm): 31.75; H (mm): 10.16; Min Operating temperature: -40; Max operating temperature (°C): 85; Isolation (VDC): 3500; EMC compliance 2: EN 55032 Class A; Case material: Copper; Application 4 (building automation/IoT): 1; MTBF (h): 1121000; Derating : 85; Voltage Accuracy (%): ±1; Line Regulation (% of Vin): ±0.5; Load Regulation %: ±0.5; Ripple & Noise (mV p-p): 60; Switching Frequency typ (KHz): 266; Short circuit protection: Continuous

Memory Circuit, Flash+PSRAM, CMOS, PBGA73

Multi-Port SRAM, 8KX8, 35ns, CMOS, CQCC68,

Memory IC,

DC/DC Converter; Product Weight (grams): 17; Input voltage min (V): 9; Input voltage max (V): 18; Output voltage min: 24; Output voltage max: 24; Output voltage dual assymetric (y/n): Dual; Output Power (W): 4; Max Output current (A): ±0.083; Efficiency (%): 77; Max Capacitive load (µF): ±100; Package type: DIP24; Mounting: PCB; W (in): 0.8; L (in): 1.25; H (in): 0.4; W (mm): 20.32; L (mm): 31.75; H (mm): 10.16; Min Operating temperature: -40; Max operating temperature (°C): 85; Isolation (VDC): 3500; Case material: Copper; Application 4 (building automation/IoT): 1; MTBF (h): 1000000; Derating : 71; Voltage Accuracy (%): ±1; Line Regulation (% of Vin): ±0.5; Load Regulation %: ±0.5; Ripple & Noise (mV p-p): 60; Switching Frequency typ (KHz): 400; Short circuit protection: Continuous

FIFO, 2KX9, 35ns, Asynchronous, CMOS, CQCC32

Memory Circuit, 1MX16, CMOS, PBGA69, 8 X 11 MM, FBGA-69