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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FDN359AN_NL | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN3401 | Fairchild Semiconductor Corporation | FDN3401 | - | |||||
| AD | PMZ1000UN,315 | Nexperia | MOSFET/FET,Nexperia PMZ1000UN - Small Signal Field-Effect Transistor, 0.48A, 30V, N-Channel MOSFET, XQFN3 | |||||
| FDN7603S | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
| FDN600 | Fairchild Semiconductor Corporation | Rectifier Diode, 1 Element, 0.125A, 75V V(RRM), | - | |||||
| FDN358PS62Z | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN304P_NL | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN338P-T/R | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN337NS62Z | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN340PS62Z | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN302PS62Z | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | - | |||||
| FDN537N | VBsemi 微碧 | MOS管 N-Channel VDS=30V VGS=±20V ID=5.3A RDS(ON)=33mΩ@4.5V SOT23, SMT, VBsemi, 1.1W, VBsemi Electronics Co. Ltd, N-沟道, 5.3A, 3.04 x 1.40mm, SOT-23, -55℃~+150℃(TJ), China Taiwan, 33mΩ, 335pF, 30V, 1.12mm, MOSFET, 3Pin, Yes, 17pF, 2.1nC | - | |||||
| FDN5630-NL-VB | VBsemi 微碧 | MOSFETs N沟道 耐压:60V 电流:4A SOT-23, SMT, N-沟道, 4A, 3.04 x 1.40mm, SOT-23, 60V, 1.12mm | - | |||||
| FDN335N-NL | VBsemi 微碧 | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23, SMT, 1.25W, VBsemi Electronics Co. Ltd, 5A, SOT-23, -55℃~+150℃(TJ), 28mΩ, 20V, MOSFET, 20V, Tape/reel, ±12V, 单路, 3000pcs, Yes, Active, 55pF, Active, 1V@250µA, 18nC | - | |||||
| FDN338P | MSKSEMI 美森科 | - | ||||||
| FDN5630 | UMW 友台半导体 | - | ||||||
| FDN359BN(UMW) | UMW 友台半导体 | - | ||||||
| FDN339AN(UMW) | UMW 友台半导体 | - | ||||||
| FDN306P | UMW 友台半导体 | - | ||||||
| FDN028N20-HXY | HXYMOS 华轩阳 | - | ||||||
| FDN304PZ-HXY | HXYMOS 华轩阳 | - | ||||||
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