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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FLL177ME | FUJITSU Semiconductor Limited | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 | - | |||||
| FLL177ME | SUMITOMO ELECTRIC Device Innovations Inc | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 2 PIN | - | |||||
| AD | PEMD12,115 | Nexperia | 双极晶体管,Nexperia PEMD12 - Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP, SOT6 | |||||
| FLL177ME | SUMITOMO ELECTRIC Industries Ltd | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE ME, 2 PIN | - | |||||
| FLL177ME | FUJITSU Limited | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE ME, 4 PIN | - | |||||
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