对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FQA44N30 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 43.5A I(D), 300V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQAFREQ2AAD00010 | Fox Electronics | Series - Fundamental Quartz Crystal, 12MHz Min, 16MHz Max, ULTRA MINIATURE, CERAMIC, SMD, 2 PIN | - | |||||
AD | 2SC1815-Y(TPE2ND,F | Toshiba | 双极晶体管,2SC1815 - TRANSISTOR (SILICON) | |||||
FQA7N80_F109 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | - | |||||
FQAF10N80 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 6.7A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQAF6N90 | Rochester Electronics LLC | 4.5A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | - | |||||
FQAF44N10 | Rochester Electronics LLC | 33A, 100V, 0.039ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PF, 3 PIN | - | |||||
FQA33N10L | Rochester Electronics LLC | 36A, 100V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | - | |||||
FQAF70N10 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 45A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQA16N25C | Rochester Electronics LLC | 17.8A, 250V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | - | |||||
FQA70N10_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN | - | |||||
FQA62N25C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | - | |||||
FQAF5N90 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.1A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQA7N80 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA7N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA24N50F | ISC 无锡固电 | - | ||||||
FQA40N25 | ISC 无锡固电 | - | ||||||
FQA70N15 | ISC 无锡固电 | - | ||||||
FQA140N10 | ISC 无锡固电 | - | ||||||
FQA28N50F | ISC 无锡固电 | - | ||||||
FQA8N100C | ISC 无锡固电 | - |