对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FQA13N80 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12.6A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
FQA7N90 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.4A I(D), 900V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | - | |||||
AD | PSMN3R5-80PS,127 | Nexperia | MOSFET/FET,Nexperia PSMN3R5-80PS - 120A, 80V, 0.0035ohm, N-Channel Power MOSFET, TO-220AB | |||||
FQA9N90_F109 | Fairchild Semiconductor Corporation | N-Channel QFET® MOSFET 900V, 8.6A, 1.3Ω, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL | - | |||||
FQAG-FREQ3-BBE00010 | Fox Electronics | Series - Fundamental Quartz Crystal, 16MHz Min, 50MHz Max, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
FQAG-50.000MHZ-BBE00030 | Fox Electronics | Series - 3Rd Overtone Quartz Crystal, 50MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
FQA47P06SMDR4 | TT Electronics Resistors | Power Field-Effect Transistor, 55A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | - | |||||
FQAF17P10 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 12.4A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQAF30N40 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQAG-40.000MHZ-BBE10010 | Fox Electronics | Parallel - Fundamental Quartz Crystal, 40MHz Nom, ROHS COMPLIANT, CERAMIC, SMD, 2 PIN | - | |||||
FQA47P06SMD2 | TT Electronics Resistors | Power Field-Effect Transistor, 55A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AC, HERMETIC SEALED, CEREMIC, SMD2, 3 PIN | - | |||||
FQA47P06SMD2 | TT Electronics Power and Hybrid / Semelab Limited | 55A, 60V, 0.026ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AC, HERMETIC SEALED, CEREMIC, SMD2, 3 PIN | - | |||||
FQA17P10 | Rochester Electronics LLC | 18A, 100V, 0.19ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | - | |||||
FQA47P06SMD | TT Electronics Power and Hybrid / Semelab Limited | 55A, 60V, 0.026ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | - | |||||
FQAF16N25C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11.4A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | - | |||||
FQA140N10 | Inchange Semiconductor Company Ltd | MOSFETs;140A;100V;TO-3P | - | |||||
FQA24N50F | Inchange Semiconductor Company Ltd | MOSFETs;24A;500V;TO-3P | - | |||||
FQA40N25 | Inchange Semiconductor Company Ltd | MOSFETs;40A;250V;TO-3P | - | |||||
FQA8N100C | Inchange Semiconductor Company Ltd | MOSFETs;8A;1000V;TO-3P | - | |||||
FQA28N50F | Inchange Semiconductor Company Ltd | MOSFETs;28.4A;500V;TO-3P | - | |||||
FQA70N15 | Inchange Semiconductor Company Ltd | MOSFETs;70A;150V;TO-3P | - |