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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FQD18N20V2 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | - | |||||
| FQD4N20TM | Rochester Electronics LLC | 3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| AD | BC857AMB,315 | Nexperia | 双极晶体管,TRANSISTORS>100MHZ | |||||
| FQD6N50CTM | Rochester Electronics LLC | 4.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | - | |||||
| FQD50P06 | ISC 无锡固电 | - | ||||||
| FQD19N10LTM(UMW) | UMW 友台半导体 | - | ||||||
| FQD13N06LTM(UMW) | UMW 友台半导体 | - | ||||||
| FQD50N06-HXY | HXYMOS 华轩阳 | - | ||||||
| FQD2N60CTM | HXYMOS 华轩阳 | - | ||||||
| FQD13N10 | ISC 无锡固电 | - | ||||||
| FQD7P20 | ISC 无锡固电 | - | ||||||
| FQD7N10LTM(UMW) | UMW 友台半导体 | - | ||||||
| FQD20N06 | UMW 友台半导体 | - | ||||||
| FQD13N10LTM | UMW 友台半导体 | - | ||||||
| FQD20N06-HXY | HXYMOS 华轩阳 | - | ||||||
| FQD13N10L-HXY | HXYMOS 华轩阳 | - | ||||||
| FQD13N06L-HXY | HXYMOS 华轩阳 | - | ||||||
| FQD50N06 | ISC 无锡固电 | - | ||||||
| FQD17P06TM(UMW) | UMW 友台半导体 | - | ||||||
| FQD5N60CTM | HXYMOS 华轩阳 | - | ||||||
| FQD7P06-HXY | HXYMOS 华轩阳 | - | ||||||
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