fqd_fqd中文资料_datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	FQD6N60CTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD5N20LTM	ON Semiconductor	Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL	获取价格￥5.2931	请求模型数据手册替代料
AD	BLA1011-2,112	Ampleon	射频功率场效应晶体管,BLA1011-2, Avionics LDMOS transistor, SOT538 (CDIP2) 数据手册立即购买了解更多		数据手册立即购买了解更多
对比	FQD18N20V2TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD4P25TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD2P25TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD6N60CTM-WS	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	FQD3N60	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD7N10L	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD6N50CTF	Rochester Electronics LLC	4.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD2N80TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD3P50	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD1N60	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD10N20CTM	Rochester Electronics LLC	7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD9N25TM_F085	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD2N50TM	Rochester Electronics LLC	1.6A, 500V, 5.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD7P06TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD7P20	Inchange Semiconductor Company Ltd	MOSFETs;-5.7A;-200V;DPAK/TO-252	获取价格 -	请求模型数据手册替代料
对比	FQD50P06	Inchange Semiconductor Company Ltd	MOSFETs;-50A;-60V;TO-220	获取价格 -	请求模型数据手册替代料
对比	FQD50N06	Inchange Semiconductor Company Ltd	MOSFETs;50A;60V;TO-252	获取价格 -	请求模型数据手册替代料
对比	FQD13N10	Inchange Semiconductor Company Ltd	MOSFETs;10A;100V;DPAK/TO-252	获取价格 -	请求模型数据手册替代料

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