fqd_fqd中文资料_datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	FQD3N40TF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD6N40CTF	Rochester Electronics LLC	4.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3	获取价格 -	请求模型数据手册替代料
AD	AUIRFB8409	Infineon Technologies	MOSFET/FET，AUIRFB8409 - 20V-40V N-Channel Automotive MOSFET 数据手册立即购买了解更多		数据手册立即购买了解更多
对比	FQD13N06LTF	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD6N25TM	Rochester Electronics LLC	4.4A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD2N60CTM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD3N50CTM-SN00124	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	FQD6N50C	ON Semiconductor	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	获取价格 -	请求模型数据手册替代料
对比	FQD2N50	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD8P10	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD2N60C	ON Semiconductor	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	获取价格 -	请求模型数据手册替代料
对比	FQD5N50TM	Rochester Electronics LLC	3.5A, 500V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD4N25TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD16N15	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 11.8A I(D), 150V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD3P50	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD3N60	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	请求模型数据手册替代料
对比	FQD1N80TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3	获取价格 -	ECAD 数据手册替代料
对比	FQD7P20	Inchange Semiconductor Company Ltd	MOSFETs;-5.7A;-200V;DPAK/TO-252	获取价格 -	请求模型数据手册替代料
对比	FQD50P06	Inchange Semiconductor Company Ltd	MOSFETs;-50A;-60V;TO-220	获取价格 -	请求模型数据手册替代料
对比	FQD50N06	Inchange Semiconductor Company Ltd	MOSFETs;50A;60V;TO-252	获取价格 -	请求模型数据手册替代料
对比	FQD13N10	Inchange Semiconductor Company Ltd	MOSFETs;10A;100V;DPAK/TO-252	获取价格 -	请求模型数据手册替代料

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