对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FQD13N06LTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD30N06LTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
AD | FQD5N15TM | Fairchild Semiconductor | 功率场效应晶体管,Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | |||||
FQD5N30TF | Rochester Electronics LLC | 4.4A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
FQD6N40CTM-F101 | Fairchild Semiconductor Corporation | Transistor | - | |||||
FQD1N60TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD2N60CTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | - | |||||
FQD3N60CTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD3N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD6N40CTM | ON Semiconductor | Power MOSFET, N-Channel, QFET®, 400 V, 4.5 A, 1.0 Ω, DPAK, 2500-REEL | ¥5.1722 | |||||
FQD1N50 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD5N60CTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 | - | |||||
FQD18N20V2TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 | - | |||||
FQD5N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | - | |||||
FQD3P50TM_F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | - | |||||
FQD7N20LTM | ON Semiconductor | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK, 2500-REEL | ¥4.0085 | |||||
FQD9N25TM_F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | - | |||||
FQD6N25TM | Rochester Electronics LLC | 4.4A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
FQD13N10 | Inchange Semiconductor Company Ltd | MOSFETs;10A;100V;DPAK/TO-252 | - | |||||
FQD50P06 | Inchange Semiconductor Company Ltd | MOSFETs;-50A;-60V;TO-220 | - | |||||
FQD50N06 | Inchange Semiconductor Company Ltd | MOSFETs;50A;60V;TO-252 | - |