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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FQD24N08 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD1N80TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| AD | BLA0912-250 | Ampleon | 射频/微波组件,BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor | |||||
| FQD4N25TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD11P06 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD3P20TF | Rochester Electronics LLC | 2.4A, 200V, 2.7ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD7N10LTF | Rochester Electronics LLC | 5.8A, 100V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD10N20LTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD5N20LTF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD17N08LTF | Rochester Electronics LLC | 12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD7P06TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD6N25TM | Rochester Electronics LLC | 4.4A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD7P06TF_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | - | |||||
| FQD8P10TF | Rochester Electronics LLC | 6.6A, 100V, 0.53ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD13N06TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD9N15TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD5N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | - | |||||
| FQD7P20 | Inchange Semiconductor Company Ltd | MOSFETs;-5.7A;-200V;DPAK/TO-252 | - | |||||
| FQD50P06 | Inchange Semiconductor Company Ltd | MOSFETs;-50A;-60V;TO-220 | - | |||||
| FQD50N06 | Inchange Semiconductor Company Ltd | MOSFETs;50A;60V;TO-252 | - | |||||
| FQD13N10 | Inchange Semiconductor Company Ltd | MOSFETs;10A;100V;DPAK/TO-252 | - | |||||
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