对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
FQD6N60CTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | - | |||||
FQD5N20LTM | ON Semiconductor | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK, 2500-REEL | ¥5.2931 | |||||
AD | BLA1011-2,112 | Ampleon | 射频功率场效应晶体管,BLA1011-2, Avionics LDMOS transistor, SOT538 (CDIP2) | |||||
FQD18N20V2TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 15A I(D), 200V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, DPAK-3 | - | |||||
FQD4P25TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD2P25TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD6N60CTM-WS | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
FQD3N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD7N10L | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD6N50CTF | Rochester Electronics LLC | 4.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, DPAK-3 | - | |||||
FQD2N80TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD3P50 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD1N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD10N20CTM | Rochester Electronics LLC | 7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3 | - | |||||
FQD9N25TM_F085 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | - | |||||
FQD2N50TM | Rochester Electronics LLC | 1.6A, 500V, 5.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
FQD7P06TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
FQD7P20 | Inchange Semiconductor Company Ltd | MOSFETs;-5.7A;-200V;DPAK/TO-252 | - | |||||
FQD50P06 | Inchange Semiconductor Company Ltd | MOSFETs;-50A;-60V;TO-220 | - | |||||
FQD50N06 | Inchange Semiconductor Company Ltd | MOSFETs;50A;60V;TO-252 | - | |||||
FQD13N10 | Inchange Semiconductor Company Ltd | MOSFETs;10A;100V;DPAK/TO-252 | - |