FQP

Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

Fixed Resistor, Wire Wound, 7W, 24ohm, 350V, 5% +/-Tol, -300,300ppm/Cel,

Fixed Resistor, Wire Wound, 1W, 1.07ohm, 250V, 1% +/-Tol, -300,300ppm/Cel, 5524,

Fixed Resistor, Wire Wound, 10W, 30ohm, 350V, 5% +/-Tol, -300,300ppm/Cel,

Fixed Resistor, Wire Wound, 3W, 75ohm, 300V, 1% +/-Tol, -300,300ppm/Cel, 8732,

Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Power Field-Effect Transistor, 1.5A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

MOSFETs;9.5A;200V;TO-220

MOSFETs;12.8A;100V;TO-220

MOSFETs;17.8A;250V;TO-220

MOSFETs;50A;60V;TO-220

MOSFETs;12A;600V;TO-220F

MOSFETs;50A;60V;TO-220

MOSFETs;8A;900V;TO-220F

MOSFETs;9.5A;200V;TO-220F

MOSFETs;21A;60V;TO-220

MOSFETs;12.8A;100V;TO-220

MOSFETs;6.6A;800V;TO-220F

MOSFETs;13A;500V;TO-220F

MOSFETs;32.6A;60V;TO-220F