MC4

Standard SRAM, 16X1, TTL, CDIP14

NAND Gate, TTL, CDIP14

IC,MEMORY DRIVER,TTL,FP,14PIN,CERAMIC

IC,BUS SWITCH,TTL,DIP,16PIN,CERAMIC

CAP,CERAMIC,1.2NF,500VDC,5% -TOL,5% +TOL,X7R TC CODE,-15,15% TC,4040 CASE

IC,COUNTER,UP/DOWN,TTL,FP,24PIN,CERAMIC

IC,FLIP-FLOP,SINGLE,SET/RESET TYPE,TTL,FP,14PIN,CERAMIC

CAP,CERAMIC,12NF,3KVDC,10% -TOL,10% +TOL,NP0 TC CODE,-30,30PPM TC,4040 CASE

Barrier Strip Terminal Block, 10A, 1 Row(s), 1 Deck(s),

CAP,CERAMIC,3.9NF,1KVDC,10% -TOL,10% +TOL,NP0 TC CODE,-30,30PPM TC,4040 CASE

瞬态抑制二极管, 1500W, 380.00V, 420.00V, 342.0V, 1uA, 2.72A, 548.0V

瞬态抑制二极管, 1500W, 418.00V, 462.00V, 376.2V, 1uA, 2.47A, 602.0V

瞬态抑制二极管, 1500W, 40.85V, 45.15V, 36.8V, 1uA, 25.30A, 59.3V

Product Status:New Product, AEC-Q101 Qualified:Y, Configuration(W):UNI, PD(V):5000, VRWM(V):48, VBR @ IT Min.(V):53.3, VBR @ IT Max.(mA):58.9, IT(µA):1, IR @ VRWM UNI(µA):5

Product Status:New Product, Configuration(W):UNI, PD(V):5000, VRWM(V):40, VBR @ IT Min.(V):44.4, VBR @ IT Max.(mA):49.1, IT(µA):1, IR @ VRWM UNI(µA):5, VC @ IPP Max.(A):64.5

Product Status:New Product, Configuration(W):UNI, PD(V):5000, VRWM(V):45, VBR @ IT Min.(V):50, VBR @ IT Max.(mA):55.3, IT(µA):1, IR @ VRWM UNI(µA):5, VC @ IPP Max.(A):72.7

Product Status:Active, AEC-Q101 Qualified:Y, Configuration(W):UNI, PD(V):1500, VRWM(V):40.2, VBR @ IT Min.(V):44.7, VBR @ IT Max.(mA):49.4, IT(µA):1, IR @ VRWM UNI(µA):1

Product Status:Active, AEC-Q101 Qualified:Y, Configuration(W):BI, PD(V):1500, VRWM(V):40.2, VBR @ IT Min.(V):44.7, VBR @ IT Max.(mA):49.4, IT(µA):1, IR @ VRWM BI(V):1

Product Status:Active, Configuration(W):UNI, PD(V):1500, VRWM(V):36.8, VBR @ IT Min.(V):40.9, VBR @ IT Max.(mA):45.2, IT(µA):1, IR @ VRWM UNI(µA):1, VC @ IPP Max.(A):59.3

Product Status:Active, Configuration(W):BI, PD(V):1500, VRWM(V):40.2, VBR @ IT Min.(V):44.7, VBR @ IT Max.(mA):49.4, IT(µA):1, IR @ VRWM UNI(µA):1, IR @ VRWM BI(V):1